標題: | Circuit performance degradation of switched-capacitor circuit with bootstrapped technique due to gate-oxide overstress in a 130-nm CMOS process |
作者: | Chen, Jung-Sheng Ker, Ming-Dou 電機學院 College of Electrical and Computer Engineering |
關鍵字: | gate-oxide reliability;sample-and-hold amplifier;dielectric breakdown;bootstrapped switch;switched-capacitor circuit |
公開日期: | 1-三月-2008 |
摘要: | The MOS switch with bootstrapped technique is widely used in low-voltage switched-capacitor circuit. The switched-capacitor circuit with the bootstrapped technique could be a dangerous design approach in the nano-scale CMOS process due to the gate-oxide transient overstress. The impact of gate-oxide transient overstress on MOS switch in switched-capacitor circuit is investigated in this work with the sample-and-hold amplifier (SHA) in a 130-nm CMOS process. After overstress on the MOS switch of SHA with unity-gain buffer, the circuit performances in time domain and frequency domain are measured to verify the impact of gate-oxide reliability on circuit performances. The oxide breakdown on switch device degrades the circuit performance of bootstrapped switch technique. |
URI: | http://dx.doi.org/10.1093/ietele/e91-c.3.378 http://hdl.handle.net/11536/9593 |
ISSN: | 0916-8524 |
DOI: | 10.1093/ietele/e91-c.3.378 |
期刊: | IEICE TRANSACTIONS ON ELECTRONICS |
Volume: | E91C |
Issue: | 3 |
起始頁: | 378 |
結束頁: | 384 |
顯示於類別: | 期刊論文 |