砷離子佈植砷化鎵的特性研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	張振雄	en_US
dc.contributor.author	CHANG CHEN-SHIUNG	en_US
dc.date.accessioned	2014-12-13T10:39:08Z	-
dc.date.available	2014-12-13T10:39:08Z	-
dc.date.issued	1996	en_US
dc.identifier.govdoc	NSC85-2215-E009-064	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/96120	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=234693&docId=43086	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	砷化鎵	zh_TW
dc.subject	非晶質	zh_TW
dc.subject	深能階缺陷	zh_TW
dc.subject	薄膜	zh_TW
dc.subject	GaAs	en_US
dc.subject	Amorphous	en_US
dc.subject	Deep level trap	en_US
dc.subject	Thin film	en_US
dc.title	砷離子佈植砷化鎵的特性研究	zh_TW
dc.title	Characterization of Arsenic Ion Implanted GaAs	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學光電工程研究所	zh_TW
顯示於類別：	研究計畫