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dc.contributor.author蘇翔en_US
dc.date.accessioned2014-12-13T10:39:09Z-
dc.date.available2014-12-13T10:39:09Z-
dc.date.issued1996en_US
dc.identifier.govdocNSC85-2215-E009-055zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/96146-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=235104&docId=43197en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject化學氣相沉積法zh_TW
dc.subject金屬化zh_TW
dc.subject極大型積體電路zh_TW
dc.subjectzh_TW
dc.subjectCVDen_US
dc.subjectMetallizationen_US
dc.subjectULSIen_US
dc.subjectAluminumen_US
dc.title化學氣相沉積擴散障礙層和鋁在極大型積體電路金屬連線之先導性研究(II)zh_TW
dc.titleChemical Vapor Deposition of Barrier Metal and Aluminum for ULSI Metallization (II)en_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子工程學系zh_TW
Appears in Collections:Research Plans