Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 蘇翔 | en_US |
dc.date.accessioned | 2014-12-13T10:39:09Z | - |
dc.date.available | 2014-12-13T10:39:09Z | - |
dc.date.issued | 1996 | en_US |
dc.identifier.govdoc | NSC85-2215-E009-055 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/96146 | - |
dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=235104&docId=43197 | en_US |
dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.subject | 化學氣相沉積法 | zh_TW |
dc.subject | 金屬化 | zh_TW |
dc.subject | 極大型積體電路 | zh_TW |
dc.subject | 鋁 | zh_TW |
dc.subject | CVD | en_US |
dc.subject | Metallization | en_US |
dc.subject | ULSI | en_US |
dc.subject | Aluminum | en_US |
dc.title | 化學氣相沉積擴散障礙層和鋁在極大型積體電路金屬連線之先導性研究(II) | zh_TW |
dc.title | Chemical Vapor Deposition of Barrier Metal and Aluminum for ULSI Metallization (II) | en_US |
dc.type | Plan | en_US |
dc.contributor.department | 國立交通大學電子工程學系 | zh_TW |
Appears in Collections: | Research Plans |