高功率0.808和0.98μm雷射(邊射型)

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	黃凱風	en_US
dc.contributor.author	HUANG KAI-FENG	en_US
dc.date.accessioned	2014-12-13T10:39:11Z	-
dc.date.available	2014-12-13T10:39:11Z	-
dc.date.issued	1996	en_US
dc.identifier.govdoc	NSC85-2215-E009-020	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/96167	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=230448&docId=41895	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	高功率半導體雷射	zh_TW
dc.subject	分子束磊晶	zh_TW
dc.subject	鏡面氧化毀損	zh_TW
dc.subject	High power semiconductor laser	en_US
dc.subject	Molecular beam epitaxy	en_US
dc.subject	Catastrophic opiticaldamage	en_US
dc.title	高功率0.808和0.98μm雷射(邊射型)	zh_TW
dc.title	High Power 0.808 and 0.98.mu.m Semiconductor Lasers	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子物理學系	zh_TW
顯示於類別：	研究計畫