| 標題: | 次微米元件區離子佈植與缺陷退火的研究 The Study of Ion Implantation and Defects Annealing in Submicron Device Active Areas |
| 作者: | 朱志勳 國立交通大學 |
| 公開日期: | 1995 |
| 官方說明文件#: | NSC84-2215-E009-081 |
| URI: | http://hdl.handle.net/11536/96258 https://www.grb.gov.tw/search/planDetail?id=161214&docId=26834 |
| Appears in Collections: | Research Plans |
- Argon ion-implantation on polysilicon or amorphous-silicon for boron penetration suppression in p(+) pMOSFET / Lee, LS;Lee, CL
- Electrical properties of multiple high-dose Si implantation in p-GaN / Lai, WC;Yokoyama, M;Tsai, CC;Chang, CS;Guo, JD
- Removal of end-of-range defects in Ge+-pre-amorphized Si by carbon ion implantation / Chen, PS;Hsieh, TE;Chu, CH
- Effect of rapid thermal annealing on beryllium implanted p-type GaN / Huang, HW;Kao, CC;Tsai, JY;Yu, CC;Chu, CF
- LOW-TEMPERATURE FORMATION OF SHALLOW P(+)N JUNCTIONS BY BF2+ IMPLANTATION INTO THIN PD2SI FILMS ON SI SUBSTRATES / LIN, CT;MA, KP;CHOU, PF;CHENG, HC
- Formation of NiSi-silicided p(+)n shallow junctions using implant-through-silicide and low-temperature furnace annealing / Wang, CC;Lin, CJ;Chen, MC
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