| 標題: | 新結構的複晶矽薄膜電晶體的設計與低溫製作(I) The Fabrication & Investigation of Low-Temperature Processed Poly-Si TFT with Dual-Buffer Drain and Self-Induced Drain Structure (I) |
| 作者: | 葉清發 國立交通大學電子工程研究所 |
| 公開日期: | 1995 |
| 官方說明文件#: | NSC84-2215-E009-041 |
| URI: | http://hdl.handle.net/11536/96390 https://www.grb.gov.tw/search/planDetail?id=172140&docId=29235 |
| 顯示於類別： | 研究計畫 |
- Novel low-temperature polysilicon thin-film transistors with a self-aligned gate and raised source/drain formed by the damascene process / Chang, Kow Ming;Lin, Gin Min;Yang, Guo Liang
- IMPROVED IV-CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS WITH NOVEL DUAL-BUFFER DRAIN STRUCTURE / YEH, CF;CHERN, CH
- 具備新穎自我對準升高式源/汲極結構之低溫複晶矽薄膜電晶體元件之開發與寬通道效應之研究 / 林俊銘;Gin-Ming Lin;張國明;Kow-Ming Chang
- 低溫複晶矽薄膜電晶體於背光下之電性研究 / 林威廷;Wei-Ting Lin;劉柏村;Po-Tsun Liu
- Photosensitivity Analysis of Low-Temperature Poly-Si Thin-Film Transistor Based on the Unit-Lux-Current / Tai, Ya-Hsiang;Kuo, Yan-Fu;Lee, Yun-Hsiang
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