Interfacial reactions of Pt-based Schottky contacts on nGaP

標題:	Interfacial reactions of Pt-based Schottky contacts on nGaP
作者:	Chu, L. H. Chang, E. Y. Wu, Y. H. Huang, J. C. Chen, Q. Y. Chu, W. K. Seo, H. W. Lee, C. T. 材料科學與工程學系 Department of Materials Science and Engineering
公開日期:	25-二月-2008
摘要:	We have investigated the interfacial reaction between platinum and InGaP in a Schottky diode structure. There was a 7.5-nm-thick amorphous layer formed at the interface between Pt and InGaP after metal deposition. After annealing at 325 degrees C for 1 min, this amorphous layer increased to 12.8 nm and the reverse leakage current also decreased. The diffusion of Pt atoms and the crystallization of amorphous layer took place after annealing at 325 degrees C for 10 min. Prolonging the annealing to 3 h led to formation of Ga(2)Pt and GaPt(3) phases in InGaP and Schottky diodes degraded after these new phases were observed. (C) 2008 American Institute of Physics.
URI:	http://dx.doi.org/10.1063/1.2834849 http://hdl.handle.net/11536/9654
ISSN:	0003-6951
DOI:	10.1063/1.2834849
期刊:	APPLIED PHYSICS LETTERS
Volume:	92
Issue:	8
結束頁:
顯示於類別：	期刊論文

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