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dc.contributor.authorLai, Yi-Shengen_US
dc.contributor.authorWang, Jyh-Liangen_US
dc.contributor.authorLiou, Sz-Chianen_US
dc.contributor.authorTu, Chia-Hsunen_US
dc.date.accessioned2014-12-08T15:12:35Z-
dc.date.available2014-12-08T15:12:35Z-
dc.date.issued2008-02-20en_US
dc.identifier.issn0009-2614en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.cplett.2008.01.026en_US
dc.identifier.urihttp://hdl.handle.net/11536/9662-
dc.description.abstractThe growth of Pt-catalyzed SiOx nanowires by rapid thermal annealing at 900 degrees C is demonstrated in the study. The growth of the nanowire is found to occur via a catalyst driven VLS mechanism. The seed particle composed of Pt-Si alloy is observed from the reaction between SiO2 and the catalytic Pt film. When the annealing time exceeds 60 s, the SiOx nanowires first agglomerate, and then collapse to form dendritic islands on the surface. The dendritic islands may result from the reaction between Pt-Si seed particle and SiOx nanowires, and are identified to be the Pt-Si compound. (C) 2008 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleTailoring of amorphous SiOx nanowires grown by rapid thermal annealingen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.cplett.2008.01.026en_US
dc.identifier.journalCHEMICAL PHYSICS LETTERSen_US
dc.citation.volume453en_US
dc.citation.issue1-3en_US
dc.citation.spage97en_US
dc.citation.epage100en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000253883500019-
dc.citation.woscount12-
Appears in Collections:Articles


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