Tailoring of amorphous SiOx nanowires grown by rapid thermal annealing

doi:10.1016/j.cplett.2008.01.026

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lai, Yi-Sheng	en_US
dc.contributor.author	Wang, Jyh-Liang	en_US
dc.contributor.author	Liou, Sz-Chian	en_US
dc.contributor.author	Tu, Chia-Hsun	en_US
dc.date.accessioned	2014-12-08T15:12:35Z	-
dc.date.available	2014-12-08T15:12:35Z	-
dc.date.issued	2008-02-20	en_US
dc.identifier.issn	0009-2614	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.cplett.2008.01.026	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9662	-
dc.description.abstract	The growth of Pt-catalyzed SiOx nanowires by rapid thermal annealing at 900 degrees C is demonstrated in the study. The growth of the nanowire is found to occur via a catalyst driven VLS mechanism. The seed particle composed of Pt-Si alloy is observed from the reaction between SiO2 and the catalytic Pt film. When the annealing time exceeds 60 s, the SiOx nanowires first agglomerate, and then collapse to form dendritic islands on the surface. The dendritic islands may result from the reaction between Pt-Si seed particle and SiOx nanowires, and are identified to be the Pt-Si compound. (C) 2008 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.title	Tailoring of amorphous SiOx nanowires grown by rapid thermal annealing	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.cplett.2008.01.026	en_US
dc.identifier.journal	CHEMICAL PHYSICS LETTERS	en_US
dc.citation.volume	453	en_US
dc.citation.issue	1-3	en_US
dc.citation.spage	97	en_US
dc.citation.epage	100	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000253883500019	-
dc.citation.woscount	12	-
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