超薄閘極氧化層元件可靠性研究

Full metadata record

DC Field	Value	Language
dc.contributor.author	汪大暉	en_US
dc.contributor.author	WANG TAHUI	en_US
dc.date.accessioned	2014-12-13T10:39:41Z	-
dc.date.available	2014-12-13T10:39:41Z	-
dc.date.issued	2001	en_US
dc.identifier.govdoc	NSC90-2215-E009-069	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/96741	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=665707&docId=126375	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	超薄閘極	zh_TW
dc.subject	可靠度	zh_TW
dc.subject	氧化層	zh_TW
dc.subject	協助金屬-氧化物-半導體元件	zh_TW
dc.subject	Ultra-thin gate	en_US
dc.subject	Reliability	en_US
dc.subject	Oxide layer	en_US
dc.subject	CMOS device	en_US
dc.title	超薄閘極氧化層元件可靠性研究	zh_TW
dc.title	Ultra-Thin Gate Dielectric CMOS Device Reliability	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系	zh_TW
Appears in Collections:	Research Plans

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