超薄閘極氧化層元件可靠性研究

標題:	超薄閘極氧化層元件可靠性研究 Ultra-Thin Gate Dielectric CMOS Device Reliability
作者:	汪大暉 WANG TAHUI 國立交通大學電子工程學系
關鍵字:	超薄閘極;可靠度;氧化層;協助金屬-氧化物-半導體元件;Ultra-thin gate;Reliability;Oxide layer;CMOS device
公開日期:	2001
官方說明文件#:	NSC90-2215-E009-069
URI:	http://hdl.handle.net/11536/96741 https://www.grb.gov.tw/search/planDetail?id=665707&docId=126375
Appears in Collections:	Research Plans

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.