標題: Optimization of PMOS-triggered SCR devices for on-chip ESD protection in a 0.18-mu m CMOS technology
作者: Chen, Shih-Hung
Ker, Ming-Dou
電機學院
College of Electrical and Computer Engineering
公開日期: 2007
摘要: PMOS-triggered SCR devices with initial-on function have been proposed to achieve an efficient ESD protection in deep-submicron CMOS technology. The channel length of the embedded PMOS transistor in the PMOS-triggered SCR device dominates the trigger mechanism to govern the trigger voltage, holding voltage, turned-on resistance, second breakdown current, turn-on efficiency, and ESD robustness of the PMOS-triggered SCR device. The channel lengths of the embedded PMOS transistors in the PMOS-triggered SCR devices should be optimized to achieve the most efficient ESD protection design in deep-submicron or nanoscale CMOS technology.
URI: http://hdl.handle.net/11536/9679
ISBN: 978-1-4244-1014-9
期刊: IPFA 2007: PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS
起始頁: 245
結束頁: 248
Appears in Collections:Conferences Paper