| 標題: | 具有斷帶能隙的第二型異質結構半導體的激子態 Exciton States in Type-II Broken-Gap Heterostructures |
| 作者: | 朱仲夏 交通大學物理研究所 |
| 公開日期: | 1994 |
| 官方說明文件#: | NSC83-0208-M009-060 |
| URI: | http://hdl.handle.net/11536/96948 https://www.grb.gov.tw/search/planDetail?id=91925&docId=14018 |
| 顯示於類別： | 研究計畫 |
- 縱向電場對第二類型異質結構激子態的影響 / 何明時;M. S. Her;朱仲夏;C. S. Chu
- Low-lying exciton states in a type-II broken-gap quantum well structure: A variation-basis-set approach / Chu, CS;Chu, KD
- 第二類型雙量子井中的激子態 / 朱國棟;Chu, Kwo Dong;朱仲夏;C. S. Chu
- Low-lying exciton states in a type-II broken-gap quantum well structure: A variation-basis-set approach / Chu, CS;Chu, KD
- 第二型斷帶能隙異質接合結構中基於緊束縛漢彌爾頓之帶間電子傳遞 / 蘇子昂;SU, ZI-YANG;陳振芳;CHEN, ZHEN-FANG
- Exciton wave function localization and exciton diamagnetic coefficient in semiconductor quantum rings without reflection symmetry / Voskoboynikov, Oleksandr;Chiu, W. T.;Thu, L. M.
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