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dc.contributor.authorKer, Ming-Douen_US
dc.contributor.authorYen, Cheng-Chengen_US
dc.contributor.authorShih, Pi-Chiaen_US
dc.date.accessioned2014-12-08T15:12:37Z-
dc.date.available2014-12-08T15:12:37Z-
dc.date.issued2008-02-01en_US
dc.identifier.issn0018-9375en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TEMC.2007.911911en_US
dc.identifier.urihttp://hdl.handle.net/11536/9696-
dc.description.abstractA new on-chip transient detection circuit for system-level electrostatic discharge (ESD) protection is proposed. The circuit performance to detect different positive and negative fast electrical transients has been investigated by the HSPICE simulator and verified in a silicon chip. The experimental results in a 0.13-mu m CMOS integrated circuit (IC) have confirmed that the proposed on-chip transient detection circuit can be used to detect fast electrical transients during the system-level ESD events. The proposed transient detection circuit can be further combined with the power-on reset circuit to improve the immunity of the CMOS IC products against system-level ESD stress.en_US
dc.language.isoen_USen_US
dc.subjectelectrical transient detectionen_US
dc.subjectelectrostatic discharge (ESD)en_US
dc.subjectsystem-level ESD testen_US
dc.subjecttransient noiseen_US
dc.titleOn-chip transient detection circuit for system-level ESD protection in CMOS integrated circuits to meet electromagnetic compatibility regulationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TEMC.2007.911911en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITYen_US
dc.citation.volume50en_US
dc.citation.issue1en_US
dc.citation.spage13en_US
dc.citation.epage21en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000253504200002-
dc.citation.woscount12-
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