完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ma, Ming-Wen | en_US |
dc.contributor.author | Chen, Chih-Yang | en_US |
dc.contributor.author | Su, Chun-Jung | en_US |
dc.contributor.author | Wu, Woei-Cherng | en_US |
dc.contributor.author | Wu, Yi-Hong | en_US |
dc.contributor.author | Yang, Tsung-Yu | en_US |
dc.contributor.author | Kao, Kuo-Hsing | en_US |
dc.contributor.author | Chao, Tien-Sheng | en_US |
dc.contributor.author | Lei, Tan-Fu | en_US |
dc.date.accessioned | 2014-12-08T15:12:39Z | - |
dc.date.available | 2014-12-08T15:12:39Z | - |
dc.date.issued | 2008-02-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2007.914071 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/9720 | - |
dc.description.abstract | In this letter, fluorine ion implantation with low-temperature solid-phase crystallized activation scheme is used to obtain a high-performance HfO2 low-temperature poly-Si thin-film transistor (LTPS-TFT) for the first time. The secondary ion mass spectrometer (SIMS) analysis shows a different fluorine profile compared to that annealed at high temperature. About one order current reduction of I-min is achieved because 25% grain-boundary traps are passivated by fluorine implantation. In addition, the threshold voltage instability of hot carrier stress is also improved with the introduction of fluorine. The LTPS-TFT with HfO2 gate dielectric and fluorine preimplantation can simultaneously achieve low V-TH similar to 1.32 V, excellent subthreshold swing similar to 0.141 V/dec, and high I-ON/I-min current ratio 1.98 x 10(7). | en_US |
dc.language.iso | en_US | en_US |
dc.subject | fluorine implantation | en_US |
dc.subject | high-kappa | en_US |
dc.subject | hot carrier stress | en_US |
dc.subject | low-temperature poly-Si thin-film transistors (LTPS-TFTs) | en_US |
dc.title | Impacts of fluorine ion implantation with low-temperature solid-phase crystallized activation on high-kappa LTPS-TFT | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2007.914071 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 29 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 168 | en_US |
dc.citation.epage | 170 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000252622800011 | - |
dc.citation.woscount | 5 | - |
顯示於類別: | 期刊論文 |