| 標題: | 砷化銦鎵砷化鎵應變壓電效應之研究 Strain-Induced Piezoelectricity in InGaAs/GaAs Hj |
| 作者: | 林浩雄 LIN HAO-HSIUNG 國立台灣大學電機工程學系 |
| 公開日期: | 1994 |
| 官方說明文件#: | NSC83-0404-E002-030 |
| URI: | http://hdl.handle.net/11536/97258 https://www.grb.gov.tw/search/planDetail?id=109775&docId=17469 |
| Appears in Collections: | Research Plans |
- InGaAs/GaAs量子點與GaAsN/GaAs量子井的電性與光性研究 / 王錦雄;Jiin-Shung Wang;陳振芳;Jenn-Fang Chen
- Optimization of OMVPE-grown GaInP/GaAs quantum well interfaces / Chiou, SW;Lee, CP;Hong, JM;Chen, CW;Tsou, Y
- Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers / Shu, G. W.;Wang, J. S.;Shen, J. L.;Hsiao, R. S.;Chen, J. F.
- 砷化鎵氮/砷化鎵 量子井在應變與鬆弛狀態下的電性研究(III) / 陳振芳;CHEN JENN-FANG
- 氮化銦鎵奈米結構之結構與光學特性 / 蔡伩哲;Tsai, Wen-Che;張文豪;李明知;Chang, Wen-Hao
- InGaAs 應變量子阱之光調制光譜研究 / 廖建智;Liaw, Chen-Chy;楊賜麟
- Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates under magnetic fields / Tsai, FY;Lee, CP;Voskoboynikov, O;Cheng, HH;Shen, JX
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