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dc.contributor.authorChen, Ming-Jeren_US
dc.contributor.authorLee, Chien-Chihen_US
dc.contributor.authorLu, Ming-Peien_US
dc.date.accessioned2014-12-08T15:12:40Z-
dc.date.available2014-12-08T15:12:40Z-
dc.date.issued2008-02-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2841725en_US
dc.identifier.urihttp://hdl.handle.net/11536/9736-
dc.description.abstractWe observe a sequence of two-level random telegraph signals (RTSs) in the drain/source current of a 1.7 nm gate oxide silicon metal-oxide-semiconductor field-effect transistor. The RTS magnitude is transformed into the apparent Debye length around a negatively charged oxide trap. We achieve excellent reproduction of the Debye data (40 down to 5 nm). This leads to the quantified area spanned by the dominant conductive percolation paths in the underlying two-dimensional electron gas (2DEG). We find that most of the 2DEG in inversion is recovered in a largest threshold voltage sample (similar to 0.35 V), while for the lowest threshold (similar to 0.15 V), a certain conductive filament is likely to occur. The gate direct tunneling current further corroborates the percolation picture. (c) 2008 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleProbing a nonuniform two-dimensional electron gas with random telegraph signalsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2841725en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume103en_US
dc.citation.issue3en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000253238100087-
dc.citation.woscount8-
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