Random Telegraph Signal Noise Arising from Grain Boundary Traps in Nano-scale Poly-Si Nanowire Thin-Film Transistors

標題:	Random Telegraph Signal Noise Arising from Grain Boundary Traps in Nano-scale Poly-Si Nanowire Thin-Film Transistors
作者:	Lee, Chen-Ming Tsui, Bing-Yue 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	2013
摘要:	Nano-scale poly-Si thin-film transistor (TFT) is a promising device for the three-dimensional integrated circuits (3D IC) and 3D stacked flash memories. Random telegraph signal noise (RTN) arising from grain boundary traps is identified and a grain-boundary-induced-fluctuation (GBIF) model is proposed for the first time. Amonia plasma treatment can suppress this RTN source effectively.
URI:	http://hdl.handle.net/11536/22858
ISBN:	978-1-4673-3082-4
ISSN:	1524-766X
期刊:	2013 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA)
顯示於類別：	會議論文