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dc.contributor.authorTsai, CTen_US
dc.contributor.authorChen, SHen_US
dc.contributor.authorChuu, DSen_US
dc.contributor.authorChou, WCen_US
dc.date.accessioned2014-12-08T15:02:17Z-
dc.date.available2014-12-08T15:02:17Z-
dc.date.issued1996-10-15en_US
dc.identifier.issn0163-1829en_US
dc.identifier.urihttp://hdl.handle.net/11536/976-
dc.description.abstractHighly oriented Cd1-xMnxS thin films with a wurtzite structure were grown by the radio-frequency sputtering technique. The grain size of the Cd1-xMnxS thin films was found to decrease with an increase in the Mn concentration x. Moreover, the lattice softening effect due to the quantum size effect, the band-bowing phenomena accounted for by the band-gap correction arising from the chemical disorder, and the exchange interaction between the band carrier and the d electron of the magnetic Mn ions have been investigated.en_US
dc.language.isoen_USen_US
dc.titleFabrication and physical properties of radio frequency sputtered Cd1-xMnxS thin filmsen_US
dc.typeArticleen_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume54en_US
dc.citation.issue16en_US
dc.citation.spage11555en_US
dc.citation.epage11560en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
Appears in Collections:Articles