| 標題: | 以電子迴旋共振化學氣相沈積技術成長超薄閘極絕緣膜及可靠性之研究(I) Fabrication and Reliability of Ultra-thin Gate Dielectrics by ECR-CVD Technique(I) |
| 作者: | 張國明 CHANG KOW-MING 國立交通大學電子工程學系 |
| 公開日期: | 2000 |
| 官方說明文件#: | NSC89-2215-E009-089 |
| URI: | http://hdl.handle.net/11536/98062 https://www.grb.gov.tw/search/planDetail?id=583835&docId=109692 |
| Appears in Collections: | Research Plans |
- 以電子迴旋共振化學氣相沈積技術成長超薄閘極絕緣膜及可靠性之研究(II) / 張國明;CHANG KOW-MING
- 以電子迴旋共振化學氣相沈積技術成長超薄閘極絕緣膜及可靠性之研究(III) / 張國明;CHANG KOW-MING
- Electrical properties of SiN/GaN MIS diodes formed by ECR-CVD / Chang, KM;Cheng, CC;Lang, CC
- Performance and reliability of low-temperature polysilicon TFT with a novel stack gate dielectric and stack optimization using PECVD nitrous oxide plasma / Chang, KM;Yang, WC;Tsai, CP
Loading...