Title: Luminance enhancement of flip-chip light-emitting diodes by geometric sapphire shaping structure
Authors: Lee, C. E.
Kuo, H. C.
Lee, Y. C.
Tsai, M. R.
Lu, T. C.
Wang, S. C.
Kuo, C. T.
光電工程學系
Department of Photonics
Keywords: flip-chip light-emitting diodes (FC-LEDs);geometric sapphire shaping;oblique sidewall;sapphire wet etching
Issue Date: 1-Jan-2008
Abstract: The flip-chip light-emitting diodes (FC-LEDs) with geometric sapphire shaping structure were investigated. The sapphire shaping structure was formed on the. bottom side of the sapphire substrate by a chemical wet etching technique for light extraction purpose. The crystallography-etched facets were (1010) M-plane, (1102) R-plane, and (1120) A-plane against the (0001) c-axis with the angles range between 29 degrees similar to 60 degrees. These large slope oblique sidewalls are useful for light extraction efficiency enhancement. The light-output power of sapphire shaping FC-LEDs was increased 55% (at 350-mA current injection) compared to that of conventional FC-LEDs.
URI: http://dx.doi.org/10.1109/LPT.2007.912990
http://hdl.handle.net/11536/9878
ISSN: 1041-1135
DOI: 10.1109/LPT.2007.912990
Journal: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 20
Issue: 1-4
Begin Page: 184
End Page: 186
Appears in Collections:Articles


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