Luminance enhancement of flip-chip light-emitting diodes by geometric sapphire shaping structure

Title:	Luminance enhancement of flip-chip light-emitting diodes by geometric sapphire shaping structure
Authors:	Lee, C. E. Kuo, H. C. Lee, Y. C. Tsai, M. R. Lu, T. C. Wang, S. C. Kuo, C. T. 光電工程學系 Department of Photonics
Keywords:	flip-chip light-emitting diodes (FC-LEDs);geometric sapphire shaping;oblique sidewall;sapphire wet etching
Issue Date:	1-Jan-2008
Abstract:	The flip-chip light-emitting diodes (FC-LEDs) with geometric sapphire shaping structure were investigated. The sapphire shaping structure was formed on the. bottom side of the sapphire substrate by a chemical wet etching technique for light extraction purpose. The crystallography-etched facets were (1010) M-plane, (1102) R-plane, and (1120) A-plane against the (0001) c-axis with the angles range between 29 degrees similar to 60 degrees. These large slope oblique sidewalls are useful for light extraction efficiency enhancement. The light-output power of sapphire shaping FC-LEDs was increased 55% (at 350-mA current injection) compared to that of conventional FC-LEDs.
URI:	http://dx.doi.org/10.1109/LPT.2007.912990 http://hdl.handle.net/11536/9878
ISSN:	1041-1135
DOI:	10.1109/LPT.2007.912990
Journal:	IEEE PHOTONICS TECHNOLOGY LETTERS
Volume:	20
Issue:	1-4
Begin Page:	184
End Page:	186
Appears in Collections:	Articles

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