標題: Ultrasensitive detection of dopamine using a polysilicon nanowire field-effect transistor
作者: Lin, Chih-Heng
Hsiao, Cheng-Yun
Hung, Cheng-Hsiung
Lo, Yen-Ren
Lee, Cheng-Che
Su, Chun-Jung
Lin, Horng-Chin
Ko, Fu-Hsiang
Huang, Tiao-Yuan
Yang, Yuh-Shyong
材料科學與工程學系奈米科技碩博班
生物科技學系
電子工程學系及電子研究所
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
Department of Biological Science and Technology
Department of Electronics Engineering and Institute of Electronics
公開日期: 2008
摘要: An unprecedented high sensitive sensing of neurotransmitter dopamine at fM level was demonstrated using a poly-crystalline silicon nanowire field-effect transistor (poly-SiNW FET) fabricated by employing a simple and low-cost poly-Si sidewall spacer technique, which was compatible with current commercial semiconductor processes for large-scale standard manufacture.
URI: http://hdl.handle.net/11536/9940
http://dx.doi.org/10.1039/b812968a
ISSN: 1359-7345
DOI: 10.1039/b812968a
期刊: CHEMICAL COMMUNICATIONS
Issue: 44
起始頁: 5749
結束頁: 5751
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