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dc.contributor.authorYang, Shao-Mingen_US
dc.contributor.authorChien, Chao-Hsinen_US
dc.contributor.authorHuang, Jiun-Jiaen_US
dc.contributor.authorLei, Tan-Fuen_US
dc.contributor.authorTsai, Ming-Jinnen_US
dc.contributor.authorLee, Lurng-Shehngen_US
dc.date.accessioned2014-12-08T15:12:57Z-
dc.date.available2014-12-08T15:12:57Z-
dc.date.issued2007-12-24en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2821367en_US
dc.identifier.urihttp://hdl.handle.net/11536/9996-
dc.description.abstractThe characteristics of silicon-oxide-nitride-oxide-silicon-type memories embedded with cerium oxide nanocrystals were demonstrated. They were fabricated by depositing a thin CeO(2) film on the SiO(2) tunneling layer and subsequently rapid-thermal annealing process. The mean size and aerial density of the CeO(2) nanocrystals embedded in SiO(2) are estimated to be about 8-10 nm and (3-7)x10(11)/cm(-2) after a high-temperature annealing with different ambients on 900 degrees C. The program/erase behaviors and data retention characteristics were described to demonstrate its advantages for nonvolatile memory device applications. (c) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleCerium oxide nanocrystals for nonvolatile memory applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2821367en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume91en_US
dc.citation.issue26en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000251987400023-
dc.citation.woscount11-
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