Cerium oxide nanocrystals for nonvolatile memory applications

doi:10.1063/1.2821367

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yang, Shao-Ming	en_US
dc.contributor.author	Chien, Chao-Hsin	en_US
dc.contributor.author	Huang, Jiun-Jia	en_US
dc.contributor.author	Lei, Tan-Fu	en_US
dc.contributor.author	Tsai, Ming-Jinn	en_US
dc.contributor.author	Lee, Lurng-Shehng	en_US
dc.date.accessioned	2014-12-08T15:12:57Z	-
dc.date.available	2014-12-08T15:12:57Z	-
dc.date.issued	2007-12-24	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2821367	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9996	-
dc.description.abstract	The characteristics of silicon-oxide-nitride-oxide-silicon-type memories embedded with cerium oxide nanocrystals were demonstrated. They were fabricated by depositing a thin CeO(2) film on the SiO(2) tunneling layer and subsequently rapid-thermal annealing process. The mean size and aerial density of the CeO(2) nanocrystals embedded in SiO(2) are estimated to be about 8-10 nm and (3-7)x10(11)/cm(-2) after a high-temperature annealing with different ambients on 900 degrees C. The program/erase behaviors and data retention characteristics were described to demonstrate its advantages for nonvolatile memory device applications. (c) 2007 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Cerium oxide nanocrystals for nonvolatile memory applications	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2821367	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	91	en_US
dc.citation.issue	26	en_US
dc.citation.epage		en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000251987400023	-
dc.citation.woscount	11	-
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