Browsing by Author Kuo, CT

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Issue DateTitleAuthor(s)
21-Mar-2005Field emission of carbon nanotubes on anodic aluminum oxide template with controlled tube densityChen, PL; Chang, JK; Kuo, CT; Pan, FM; 材料科學與工程學系; Department of Materials Science and Engineering
1-Mar-2002Field emission, structure, cathodoluminescence and formation studies of carbon and Si-C-N nanotubesChang, HL; Lin, CH; Kuo, CT; 材料科學與工程學系; Department of Materials Science and Engineering
1-Oct-2002Formation of carbon cluster on the surface of diamond films for improving electron field emission propertiesChang, YC; Tu, JC; Kuo, CT; Wang, CY; Lin, IN; 材料科學與工程學系; Department of Materials Science and Engineering
17-Jun-2002Forming silicon carbon nitride crystals and silicon carbon nitride nanotubes by microwave plasma-enhanced chemical vapor depositionChang, HL; Hsu, CM; Kuo, CT; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jul-2004Growth behavior and interfacial reaction between carbon nanotubes and Si substrateHsu, CM; Lai, HJ; Kuo, CT; 材料科學與工程學系; Department of Materials Science and Engineering
1-Nov-2001Growth competition between crystalline silicon carbon nitrides and silicon nitrides deposited on Si wafer by MPCVDWu, JY; Kuo, CT; Yang, PJ; 材料科學與工程學系; Department of Materials Science and Engineering
1-Mar-2002Growth mechanism and properties of the large area well-aligned carbon nano-structures deposited by microwave plasma electron cyclotron resonance chemical vapor depositionLin, CH; Chang, HL; Tsai, MH; Kuo, CT; 材料科學與工程學系; Department of Materials Science and Engineering
1-Nov-2005Growth mechanism and properties of the well-aligned-carbon-coated Si nanocones by MPCVDChuang, PK; Teng, IJ; Wang, WH; Kuo, CT; 材料科學與工程學系; Department of Materials Science and Engineering
2-Dec-2002Growth of the large area horizontally-aligned carbon nanotubes by ECR-CVDHsu, CM; Lin, CH; Chang, HL; Kuo, CT; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jun-1998High adhesion and quality diamond films on steel substrateLin, CR; Kuo, CT; 材料科學與工程學系; Department of Materials Science and Engineering
18-Jul-1999High purity nano-crystalline carbon nitride films prepared at ambient temperature by ion beam sputteringLu, TR; Kuo, CT; Yang, JR; Chen, LC; Chen, KH; Chen, TM; 材料科學與工程學系; 應用化學系; Department of Materials Science and Engineering; Department of Applied Chemistry
1-Aug-2000Highly selective GaAs/Al0.2Ga0.8As wet etch process for the gate recess of low-voltage-power pseudomorphic high-electron-mobility transistorChang, HC; Chang, EY; Chung, CC; Kuo, CT; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr
1-Dec-1998Improvement in adhesion of diamond films on cemented WC substrate with Ti-Si interlayersLin, CR; Kuo, CT; Chang, RM; 材料科學與工程學系; Department of Materials Science and Engineering
6-Jan-1998Improvement of diamond film adhesion on cemented carbides (WC/Co) by using Ti and micro-diamonds as seeding germinationLin, CR; Kuo, CT; 材料科學與工程學系; Department of Materials Science and Engineering
10-Nov-1998Improvement of mechanical properties of electroplated diamond tools by microwave plasma CVD diamond processLin, CR; Kuo, CT; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jun-1998Improvement on the degradation of microwave sintered ZnO varistors by postannealingChen, CS; Kuo, CT; Lin, IN; 材料科學與工程學系; Department of Materials Science and Engineering
11-Jan-2006(In0.52Al0.48)(1-x)MnxAs muted magnetic semiconductor grown on InP substratesLee, WN; Chen, YF; Huang, JH; Guo, XJ; Kuo, CT; Chin, TS; Ku, HC; 材料科學與工程學系; Department of Materials Science and Engineering
1-Nov-2001Internal stresses and microstructures of commercial thick diamond films deposited by different deposition methodsKuo, CT; Wu, JY; Lin, CH; Lu, TR; Sung, CM; 材料科學與工程學系; Department of Materials Science and Engineering
2-Dec-2002Iron and cobalt silicide catalysts-assisted carbon nanostructures on the patterned Si substratesChang, HL; Lin, CH; Kuo, CT; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jul-2003Low resistance Ohmic contacts to n-GaN by Ar plasma and forming gas ambient treatmentsLee, CC; Lee, CP; Yeh, MH; Lee, WI; Kuo, CT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics