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Showing results 21 to 35 of 35 < previous 
Issue DateTitleAuthor(s)
1-Jul-1999Mg-related deep levels in AlInPWu, YR; Sung, WJ; Lee, SC; Li, TJ; Lee, WI; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr
1997Modified process control chart in IC fabrication using clustering analysisTong, LI; Lee, WI; 工業工程與管理學系; Department of Industrial Engineering and Management
1-Jan-2006Nonlithographic random masking and regrowth of GaN microhillocks to improve light-emitting diode efficiencyLee, CL; Lee, SC; Lee, WI; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr
1-Apr-2002Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etchingWen, TC; Lee, WI; Sheu, JK; Chi, GC; 電子物理學系; 資訊工程學系; Department of Electrophysics; Department of Computer Science
1-May-1998Outlook for photovoltaic developments in TaiwanHwang, HL; Hsu, KYJ; Lee, WI; Shing, YH; Hsu, KC; Tseng, BH; 電子物理學系; Department of Electrophysics
15-Jun-2000Phosphorus vacancy as a deep level in AlInP layersSung, WJ; Wu, YR; Lee, SC; Wen, TC; Li, TJ; Chang, JT; Lee, WI; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
2002Photoreflectance characterization of GaNAs/GaAs multiple quantum well structuresLu, CR; Lee, JR; Chen, YY; Lee, WI; Lee, SC; 電子物理學系; Department of Electrophysics
4-Mar-1996Source of Ge centers in AlGaAs grown by organometallic vapor phase epitaxy and the effect of impurity gettersLee, WI; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr
1999Study of a common deep level in GaNWen, TC; Lee, SC; Lee, WI; Guo, JD; Feng, MS; 電子物理學系; Department of Electrophysics
1-Jun-1996Temperature-dependent transport properties of n(+) GaAs/low-temperature GaAs/n(+) GaAs structures grown by molecular beam epitaxyChen, JF; Chen, NC; Chiu, SY; Wang, PY; Lee, WI; Chin, A; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-Jun-1996Temperature-dependent transport properties of n(+) GaAs/low-temperature GaAs/n(+) GaAs structures grown by molecular beam epitaxyChen, JF; Chen, NC; Chiu, SY; Wang, PY; Lee, WI; Chin, A; 電子物理學系; Department of Electrophysics
1-Apr-2003Thermal stability of plasma-treated ohmic contacts to n-GaNLee, CC; Lin, SD; Lee, CP; Yeh, MH; Lee, WI; Kuo, CT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2005Thickness dependence of current conduction and carrier distribution of GaAsN grown on GaAsChen, JF; Hsiao, RS; Hsieh, MT; Huang, WD; Guo, PS; Lee, WI; Lee, SC; Lee, CL; 電子物理學系; Department of Electrophysics
20-Apr-1998Two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be-doped GaAs grown by low-temperature molecular beam epitaxySu, ZA; Huang, JH; Hsieh, LZ; Lee, WI; 電子物理學系; Department of Electrophysics
18-Dec-1995Wide bandwidth AlAs/AlGaAs tandem Bragg reflectors grown by organometallic vapor phase epitaxyLee, WI; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics
Showing results 21 to 35 of 35 < previous