標題: Mg-related deep levels in AlInP
作者: Wu, YR
Sung, WJ
Lee, SC
Li, TJ
Lee, WI
電子物理學系
友訊交大聯合研發中心
Department of Electrophysics
D Link NCTU Joint Res Ctr
關鍵字: Mg;AlInP;defect;deep level;DLTS;depth profile measurement
公開日期: 1-七月-1999
摘要: The properties of deep levels found in Mg-doped AlInP, grown by metal-organic chemical vapor deposition, have been studied. Two distinct levels, labeled E1 and E2, were observed, with the activation energy of 0.19 and 0.514 eV, respectively. From distribution profiles measured on trap E1, E2 and Mg-dopant, all three concentration profiles have similar behaviors. The concentration increases gradually from the interface of pn junction. Furthermore, both trap E1 and E2 concentration increase with elevating Mg-dopant concentration Thus, it seems that these deep levels originate from Mg-related defects.
URI: http://dx.doi.org/10.1143/JJAP.38.4049
http://hdl.handle.net/11536/31263
ISSN: 0021-4922
DOI: 10.1143/JJAP.38.4049
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 38
Issue: 7A
起始頁: 4049
結束頁: 4050
顯示於類別:期刊論文


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