標題: | Mg-related deep levels in AlInP |
作者: | Wu, YR Sung, WJ Lee, SC Li, TJ Lee, WI 電子物理學系 友訊交大聯合研發中心 Department of Electrophysics D Link NCTU Joint Res Ctr |
關鍵字: | Mg;AlInP;defect;deep level;DLTS;depth profile measurement |
公開日期: | 1-七月-1999 |
摘要: | The properties of deep levels found in Mg-doped AlInP, grown by metal-organic chemical vapor deposition, have been studied. Two distinct levels, labeled E1 and E2, were observed, with the activation energy of 0.19 and 0.514 eV, respectively. From distribution profiles measured on trap E1, E2 and Mg-dopant, all three concentration profiles have similar behaviors. The concentration increases gradually from the interface of pn junction. Furthermore, both trap E1 and E2 concentration increase with elevating Mg-dopant concentration Thus, it seems that these deep levels originate from Mg-related defects. |
URI: | http://dx.doi.org/10.1143/JJAP.38.4049 http://hdl.handle.net/11536/31263 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.38.4049 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
Volume: | 38 |
Issue: | 7A |
起始頁: | 4049 |
結束頁: | 4050 |
顯示於類別: | 期刊論文 |