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國立陽明交通大學機構典藏
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公開日期
標題
作者
1-五月-2003
Investigation of Cu/TaN metal gate for metal-oxide-silicon devices (vol 150, pg G22, 2003)
Tsui, BY
;
Huang, CF
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2006
Investigation of molybdenum nitride gate on SiO2 and HfO2 for MOSFET application
Tsui, BY
;
Huang, CF
;
Lu, CH
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-五月-2003
Metal drift induced electrical instability of porous low dielectric constant film
Fang, KL
;
Tsui, BY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-六月-2004
A novel 25-nm modified Schottky-barrier FinFET with high performance
Tsui, BY
;
Lin, CP
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2004
A novel fully self-aligned process for high cell density trench gate power MOSFETs
Tsui, BY
;
Gan, TC
;
Wu, MD
;
Chou, HH
;
Wu, ZL
;
Sune, CT
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-十一月-2005
A novel wafer reclaim method for amorphous SiC and carbon doped oxide films
Tsui, BY
;
Fang, KL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2003
A novel wafer reclaim method for silicon carbide film
Tsui, BY
;
Fang, KL
;
Wu, CH
;
Li, YH
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2005
Optimization of back side cleaning process to eliminate copper contamination
Chou, WY
;
Tsui, BY
;
Kuo, CW
;
Kang, TK
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-十二月-2000
Plasma charging damage during contact hole etch in high-density plasma etcher
Tsui, BY
;
Lin, SS
;
Tsai, CS
;
Hsia, CC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-十一月-2005
Process and characteristics of modified Schottky barrier (MSB) p-channel FinFETs
Tsui, BY
;
Lin, CP
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-五月-2003
Process sensitivity and robustness analysis of via-first dual-damascene process
Tsui, BY
;
Chen, CW
;
Huang, SM
;
Lin, SS
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-一月-2006
Short-channel metal-gate TFTs with modified Schottky-barrier source/drain
Huang, CF
;
Tsui, BY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-五月-2004
Simulation study of carbon nanotube field emission display with under-gate and planar-gate structures
Lan, YC
;
Lee, CT
;
Hu, Y
;
Chen, SH
;
Lee, CC
;
Tsui, BY
;
Lin, TL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-七月-2003
Stability investigation of single-wafer process by using a spin etcher
Kang, TK
;
Wang, CC
;
Tsui, BY
;
Yang, WL
;
Chien, FT
;
Yang, SY
;
Chang, CY
;
Li, YH
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
26-六月-2006
Study on the interface thermal stability of metal-oxide-semiconductor structures by inelastic electron tunneling spectroscopy
Huang, CF
;
Tsui, BY
;
Tzeng, PJ
;
Lee, LS
;
Tsai, MJ
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-十一月-2001
Surface-processing-enhanced copper diffusion into fluorosilicate glass
Tsui, BY
;
Fang, KL
;
Lee, SD
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2004
Trench gate power MOSFETs with retrograde body profile
Tsui, BY
;
Wu, MD
;
Gan, TC
;
Chou, HH
;
Wu, ZL
;
Sune, CT
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-五月-2006
Two-frequency C-V correction using five-element circuit model for high-k gate dielectric and ultrathin oxide
Wu, WH
;
Tsui, BY
;
Huang, YP
;
Hsieh, FC
;
Chen, MC
;
Hou, YT
;
Jin, Y
;
Tao, HJ
;
Chen, SC
;
Liang, MS
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-七月-2003
Via-filling capability of copper film by CVD
Lin, CL
;
Chen, PS
;
Lin, YC
;
Tsui, BY
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-三月-2003
Wide range work function modulation of binary alloys for MOSFET application
Tsui, BY
;
Huang, CF
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics