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顯示 1982 到 2001 筆資料,總共 4818 筆 < 上一頁   下一頁 >
公開日期標題作者
2-十二月-2008Instantaneous Drug Delivery of Magnetic/Thermally Sensitive Nanospheres by a High-Frequency Magnetic FieldLiu, Ting-Yu; Hu, Shang-Hsiu; Liu, Kun-Ho; Shaiu, Ren-Shiuan; Liu, Dean-Mo; Chen, San-Yuan; 材料科學與工程學系; Department of Materials Science and Engineering
1-十二月-2013Instrument for x-ray absorption spectroscopy with in situ electrical control characterizationsHuang, Chun-Chao; Chang, Shu-Jui; Yang, Chao-Yao; Chou, Hsiung; Tseng, Yuan-Chieh; 材料科學與工程學系; Department of Materials Science and Engineering
15-一月-2004Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallizationCheng, YL; Wang, YL; Liu, CP; Wu, YL; Lo, KY; Liu, CW; Lan, JK; Ay, C; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
2012The integration of Ge and III-V materials on GaAs and Si for Post CMOS applicationsChang, Edward Yi; Chang, Chia Hua; Tang, Shih Hsuan; Hai Dang Trinh; Kuo, Chien I.; Hsu, Ching Yi; Su, Yung Hsuan; 材料科學與工程學系; Department of Materials Science and Engineering
2016Integration of Hetero-Structure Body-Tied Ge FinFET Using Retrograde-Well ImplantationChou, Yu-Che; Hsu, Chung-Chun; Chun, Cheng-Ting; Chou, Chen-Han; Tsai, Ming-Li; Tsai, Yi-He; Lee, Wei-Li; Wang, Shin-Yuan; Luo, Guang-Li; Chien, Chao-Hsin; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-九月-2018Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devicesHsu, Chung-Chun; Chi, Wei-Chun; Tsai, Yi-He; Tsai, Ming-Li; Wang, Shin-Yuan; Chou, Chen-Han; Zhang, Jun Lin; Luo, Guang-Li; Chien, Chao-Hsin; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十一月-2001Integration of MOCVD titanium nitride with collimated titanium and ion metal plasma titanium for 0.18-mu m logic processLan, JK; Wang, YL; Lo, KY; Liu, CP; Liu, CW; Wang, JK; Cheng, YL; Chau, CG; 材料科學與工程學系; Department of Materials Science and Engineering
1-九月-1997Integration of modified plasma-enhanced chemical vapor deposited tetraethoxysilane intermetal dielectric and chemical-mechanical polishing processes for 0.35 mu m IC device reliability improvementWang, YL; Tseng, WT; Feng, MS; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-九月-1997Integration of modified plasma-enhanced chemical vapor deposited tetraethoxysilane intermetal dielectric and chemical-mechanical polishing processes for 0.35 mu m IC device reliability improvementWang, YL; Tseng, WT; Feng, MS; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
15-五月-1994INTERACTIONS BETWEEN AL-1 WT-PERCENT SI THIN-FILM AND W-TI BARRIER LAYERCHANG, PH; CHEN, HM; LIU, HY; BOHLMAN, JG; 材料科學與工程學系; Department of Materials Science and Engineering
19-六月-2012Interface control of bulk ferroelectric polarizationYu, P.; Luo, W.; Yi, D.; Zhang, J. X.; Rossell, M. D.; Yang, C. -H.; You, L.; Singh-Bhalla, G.; Yang, S. Y.; He, Q.; Ramasse, Q. M.; Erni, R.; Martin, L. W.; Chu, Y. H.; Pantelides, S. T.; Pennycook, S. J.; Ramesh, R.; 材料科學與工程學系; Department of Materials Science and Engineering
6-五月-2013Interface control of surface photochemical reactivity in ultrathin epitaxial ferroelectric filmsChen, Jason; Lu, Haidong; Liu, Heng-Jui; Chu, Ying-Hao; Dunn, Steve; Ostrikov, Kostya (Ken); Gruverman, Alexei; Valanoor, Nagarajan; 材料科學與工程學系; Department of Materials Science and Engineering
11-十月-2012Interface dipole between two metallic oxides caused by localized oxygen vacanciesBorisevich, Albina Y.; Lupini, Andrew R.; He, Jun; Eliseev, Eugene A.; Morozovska, Anna N.; Svechnikov, George S.; Yu, Pu; Chu, Ying-Hao; Ramesh, Ramamoorthy; Pantelides, Sokrates T.; Kalinin, Sergei V.; Pennycook, Stephen J.; 材料科學與工程學系; Department of Materials Science and Engineering
1-十月-2008Interface effects on the magnetoelectric properties of (00l)-oriented Pb(Zr0.5Ti0.5)O-3/CoFe2O4 multilayer thin filmsLin, Rueijer; Wu, Tai-bor; Chu, Ying-Hao; 材料科學與工程學系; Department of Materials Science and Engineering
24-九月-2014Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect TransistorsZou, Xuming; Wang, Jingli; Chiu, Chung-Hua; Wu, Yun; Xiao, Xiangheng; Jiang, Changzhong; Wu, Wen-Wei; Mai, Liqiang; Chen, Tangsheng; Li, Jinchai; Ho, Johnny C.; Liao, Lei; 交大名義發表; 材料科學與工程學系; National Chiao Tung University; Department of Materials Science and Engineering
28-八月-2019Interface Engineering Strategy Utilizing Electrochemical ALD of Cu-Zn for Enabling Metallization of Sub-10 nm Semiconductor Device NodesJoi, Aniruddha; Venkatraman, Kailash; Tso, Kuang-Chih; Dictus, Dries; Dordi, Yezdi; Wu, Pu-Wei; Pao, Chih-Wen; Akolkar, Rohan; 材料科學與工程學系; Department of Materials Science and Engineering
6-七月-2010Interface Ferromagnetism and Orbital Reconstruction in BiFeO(3)-La(0.7)Sr(0.3)MnO(3) HeterostructuresYu, P.; Lee, J. -S.; Okamoto, S.; Rossell, M. D.; Huijben, M.; Yang, C. -H.; He, Q.; Zhang, J. X.; Yang, S. Y.; Lee, M. J.; Ramasse, Q. M.; Erni, R.; Chu, Y. -H.; Arena, D. A.; Kao, C. -C.; Martin, L. W.; Ramesh, R.; 材料科學與工程學系; Department of Materials Science and Engineering
6-七月-2010Interface Ferromagnetism and Orbital Reconstruction in BiFeO3-La0.7Sr0.3MnO3 HeterostructuresYu, P.; Lee, J. -S.; Okamoto, S.; Rossell, M. D.; Huijben, M.; Yang, C. -H.; He, Q.; Zhang, J. X.; Yang, S. Y.; Lee, M. J.; Ramasse, Q. M.; Erni, R.; Chu, Y. -H.; Arena, D. A.; Kao, C. -C.; Martin, L. W.; Ramesh, R.; 材料科學與工程學系; Department of Materials Science and Engineering
2012Interface morphology and electrical properties of bonded GaAs/GaAs wafers at different temperaturesChang, S. C.; Wu, Y. S.; Chang, N.; 材料科學與工程學系; Department of Materials Science and Engineering
2010Interface Morphology Investigation of Bonded p-GaAs/p-Si WafersHsieh, Cheng-Yu; YewChung; Wu, Sermon; 材料科學與工程學系; Department of Materials Science and Engineering