標題: | Interface morphology and electrical properties of bonded GaAs/GaAs wafers at different temperatures |
作者: | Chang, S. C. Wu, Y. S. Chang, N. 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2012 |
摘要: | The microstructure and electrical properties of p-GaAs/n-GaAs bonded interface were investigated. It was observed that when bonding temperature increased from 600 to 800 degrees C, the thickness of oxide layer decreased. Current-voltage characteristic shows typical diode behaviors in these temperature ranges. |
URI: | http://hdl.handle.net/11536/24564 http://dx.doi.org/10.1149/05007.0109ecst |
ISBN: | 978-1-60768-355-1 |
ISSN: | 1938-5862 |
DOI: | 10.1149/05007.0109ecst |
期刊: | SEMICONDUCTOR WAFER BONDING 12: SCIENCE, TECHNOLOGY, AND APPLICATIONS |
Volume: | 50 |
Issue: | 7 |
起始頁: | 109 |
結束頁: | 112 |
顯示於類別: | 會議論文 |