標題: Interface morphology and electrical properties of bonded GaAs/GaAs wafers at different temperatures
作者: Chang, S. C.
Wu, Y. S.
Chang, N.
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2012
摘要: The microstructure and electrical properties of p-GaAs/n-GaAs bonded interface were investigated. It was observed that when bonding temperature increased from 600 to 800 degrees C, the thickness of oxide layer decreased. Current-voltage characteristic shows typical diode behaviors in these temperature ranges.
URI: http://hdl.handle.net/11536/24564
http://dx.doi.org/10.1149/05007.0109ecst
ISBN: 978-1-60768-355-1
ISSN: 1938-5862
DOI: 10.1149/05007.0109ecst
期刊: SEMICONDUCTOR WAFER BONDING 12: SCIENCE, TECHNOLOGY, AND APPLICATIONS
Volume: 50
Issue: 7
起始頁: 109
結束頁: 112
Appears in Collections:Conferences Paper