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公開日期標題作者
1-一月-2014Growth Parameters Optimization of GaN High Electron Mobility Transistor Structure on Silicon Carbide SubstrateWong, Y. Y.; Huang, S. C.; Huang, W. C.; Lumbantoruan, F.; Chiu, Y. S.; Wang, H. C.; Yu, H. W.; Chang, E. Y.; 台積電與交大聯合研發中心; TSMC/NCTU Joint Research Center
1-十一月-2017Impact of material properties and device architecture on the device performance for a gate all around nanowire tunneling FETSingh, S. K.; Gupta, A.; Yu, H. W.; Nagarajan, V.; Anandan, D.; Kakkerla, R. K.; Chang, E. Y.; 材料科學與工程學系; Department of Materials Science and Engineering
2015Improved Reliability of GaN HEMTs Using N-2 Plasma Surface TreatmentLiu, S. C.; Dai, G. M.; Chang, E. Y.; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-2011Improving electrical characteristics of W/HfO(2)/In(0.53)Ga(0.47)As gate stacks by altering deposition techniquesZade, D.; Kakushima, K.; Kanda, T.; Lin, Y. C.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H.; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-2011Improving electrical characteristics of W/HfO2/In0.53Ga0.47As gate stacks by altering deposition techniquesZade, D.; Kakushima, K.; Kanda, T.; Lin, Y. C.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H.; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2013In0.5Ga0.5As-Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor DepositionNguyen, H. Q.; Trinh, H. D.; Chang, E. Y.; Lee, C. T.; Wang, Shin Yuan; Yu, H. W.; Hsu, C. H.; Nguyen, C. L.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-五月-2008Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTsDesmaris, V.; Shiu, J. Y.; Rorsman, N.; Zirath, H.; Chang, E. Y.; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-2010Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTsLu, C. Y.; Bahat-Treidel, E.; Hilt, O.; Lossy, R.; Chaturvedi, N.; Chang, E. Y.; Wuerfl, J.; Traenkle, G.; 材料科學與工程學系; Department of Materials Science and Engineering
26-七月-2010The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al(2)O(3)/n-In(0.53)Ga(0.47)As metal-oxide-semiconductor capacitorTrinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K.; 材料科學與工程學系; Department of Materials Science and Engineering
26-七月-2010The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitorTrinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K.; 材料科學與工程學系; Department of Materials Science and Engineering
25-二月-2008Interfacial reactions of Pt-based Schottky contacts on nGaPChu, L. H.; Chang, E. Y.; Wu, Y. H.; Huang, J. C.; Chen, Q. Y.; Chu, W. K.; Seo, H. W.; Lee, C. T.; 材料科學與工程學系; Department of Materials Science and Engineering
2014Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation LayerLiu, S. C.; Wong, Y. Y.; Lin, Y. C.; Chang, E. Y.; 材料科學與工程學系; Department of Materials Science and Engineering
2013Low Leakage Current GaN MIS-HEMT with SiNx Gate Insulator using N-2 Plasma TreatmentLiu, S. C.; Wang, H. C.; Chang, E. Y.; 材料科學與工程學系; Department of Materials Science and Engineering
15-一月-2011Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor depositionChiang, C. H.; Chen, K. M.; Wu, Y. H.; Yeh, Y. S.; Lee, W. I.; Chen, J. F.; Lin, K. L.; Hsiao, Y. L.; Huang, W. C.; Chang, E. Y.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
2-九月-2010Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltageChang, C. -T.; Hsu, T. -H.; Chang, E. Y.; Chen, Y. -C.; Trinh, H. -D.; Chen, K. J.; 材料科學與工程學系; Department of Materials Science and Engineering
2016Optimization of gate insulator material for GaN MIS-HEMTLin, Y. C.; Lin, T. W.; Wu, C. H.; Yao, J. N.; Hsu, H. T.; Shih, W. C.; Kakushima, K.; Tsutsui, K.; Iwai, H.; Chang, E. Y.; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
2009Photoluminescence and Raman studies of GaN films grown by MOCVDLuong Tien Tung; Lin, K. L.; Chang, E. Y.; Huang, W. C.; Hsiao, Y. L.; Chiang, C. H.; 材料科學與工程學系; Department of Materials Science and Engineering
15-九月-2006Self-assembled In0.22Ga0.78As quantum dots grown on metamorphic GaAs/Ge/SixGe1-x/Si substrateHsieh, Y. C.; Chang, E. Y.; Luo, G. L.; Chen, S. H.; Biswas, Dhrubes; Wang, S. Y.; Chang, C. Y.; 材料科學與工程學系; Department of Materials Science and Engineering
1-二月-2007SPDT GaAs switches with copper metallized interconnectsWu, Y. C.; Chang, E. Y.; Lin, Y. C.; Hsu, H. T.; Chen, S. H.; Wei, W. C.; Chu, L. H.; Chang, C. Y.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
3-十二月-2009Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallisationLu, C. -Y.; Chang, E. Y.; Huang, J. -C.; Chang, C. -T.; Lee, C. -T.; 材料科學與工程學系; Department of Materials Science and Engineering
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