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公開日期標題作者
2013GaAsN/GaAs量子井結構中光激發載子暫存降引致光電流抑制效應：等效電路RC時間常數分析黃志斌; Huang, Chih-Pin; 陳振芳; Chen, Jenn-Fang; 電子物理系所
2017GaAsN/GaAs量子井蕭基二極體在照光下之光電容模擬許雨堤; 陳振芳; Hsu, Yu-Ti; Chen, Jenn-Fang; 電子物理系所
2006High-Efficiency Inverted Transparent Blue Organic Light-Emitting DevicesChen, Szu-Yi; Chu, Ta-Ya; Chen, Chao-Jung; Chen, Jenn-Fang; Chen, Chin H.; 顯示科技研究所; Institute of Display
31-七月-2006Highly efficient and stable inverted bottom-emission organic light emitting devicesChu, Ta-Ya; Chen, Jenn-Fang; Chen, Szu-Yi; Chen, Chao-Jung; Chen, Chin H.; 電子物理學系; 顯示科技研究所; 友訊交大聯合研發中心; Department of Electrophysics; Institute of Display; D Link NCTU Joint Res Ctr
18-十二月-2006Highly power efficient organic light-emitting diodes with a p-doping layerChang, Chan-Ching; Hsieh, Ming-Ta; Chen, Jenn-Fang; Hwang, Shiao-Wen; Chen, Chin H.; 電子物理學系; 電子與資訊研究中心; Department of Electrophysics; Microelectronics and Information Systems Research Center
1-四月-2007Highly stable thermal characteristics of a novel In0.3Ga0.7As0.99N0.01 (Sb)/GaAs high-electron-mobility transistorSu, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Hu, Po-Jung; Hsia, Ru-Shang; Chen, Jenn-Fang; 電子物理學系; Department of Electrophysics
1-八月-2013Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking LayerFu, Yi-Keng; Lu, Yu-Hsuan; Xuan, Rong; Chen, Jenn-Fang; Su, Yan-Kuin; 電子物理學系; Department of Electrophysics
2012(In)GaAsN/GaAs量子井中N相關之局部侷限能階的形成機制與電性量測分析謝孟謙; Hsieh, Meng-Chien; 陳振芳; Chen, Jenn-Fang; 電子物理系所
2011InAs/InGaAs量子點光電容特性曾國豪; Tseng, Kuo-Hau; 陳振芳; Chen, Jenn-Fang; 電子物理系所
2008InAs量子點中缺陷效應影響之量子躍遷機制傅昱翔; Fu, Yu-Hsiang; 陳振芳; Chen, Jenn-Fang; 電子物理系所
2008InAs量子點掺入氮之電子放射與捕獲機制研究吳嘉葳; Wu, Chia-Wei; 陳振芳; Chen, Jenn-Fang; 電子物理系所
2016InAs量子點蕭基二極體之導納模擬及照光下的光電壓效應許昶誌; 陳振芳; Hsu, Chang-Jhih; Chen, Jenn-Fang; 電子物理系所
2017InAs量子點蕭基二極體之導納頻譜分析與模擬洪如薏; 陳振芳; Hung, Ju-Yi; Chen, Jenn-Fang; 電子物理系所
1-四月-2008Investigations on highly stable thermal characteristics of a dilute In(0.2)Ga(0.8)AsSb/GaAs doped-channel field-effect transistorSu, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Hu, Po-Jung; Wu, Yue-Han; Chang, Li; Hsiao, Ru-Shang; Chen, Jenn-Fang; Chi, Tung-Wei; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
5-八月-2010MANUFACTURE METHOD OF MULTILAYER STRUCTURE HAVING NON-POLAR A-PLANE III-NITRIDE LAYERLee, Wei-I; Chen, Jenn-Fang; Chiang, Chen-Hao
1-二月-2007A novel dilute antimony channel In0.2Ga0.8AsSb/GaAs HEMTSu, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Wu, Tsung-Yeh; Wu, Yue-Han; Chang, Li; Hsiao, Ru-Shang; Chen, Jenn-Fang; Chi, Tung-Wei; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
15-十一月-2011Optical joint density of states in InGaN/GaN-based multiple-quantum-well light-emitting diodesWang, Yu-Shou; Chen, Nai-Chuan; Lu, Chun-Yi; Chen, Jenn-Fang; 電子物理學系; Department of Electrophysics
15-三月-2012Optical Simulation and Fabrication of Near-Ultraviolet LEDs on a Roughened Backside GaN SubstrateFu, Yi-Keng; Lu, Yu-Hsuan; Xuan, Rong; Chao, Chia-Hsin; Su, Yan-Kuin; Chen, Jenn-Fang; 電子物理學系; Department of Electrophysics
2011Photoluminescence Study of Interdot Carrier Transfer on Strain-relaxed InAs Quantum DotsChiang, Chen-Hao; Chang, You-Cheng; Wu, Yue-Han; Hsieh, Meng-Chien; Yang, Cheng-Hong; Wang, Jia-Feng; Chang, Li; Chen, Jenn-Fang; 電子物理學系; Department of Electrophysics
15-六月-2011Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN SubstratesChao, Chu-Li; Xuan, Rong; Yen, Hsi-Hsuan; Chiu, Ching-Hsueh; Fang, Yen-Hsiang; Li, Zhen-Yu; Chen, Bo-Chun; Lin, Chien-Chung; Chiu, Ching-Hua; Guo, Yih-Der; Kuo, Hao-Chung; Chen, Jenn-Fang; Cheng, Shun-Jen; 光電系統研究所; 電子物理學系; 光電工程學系; Institute of Photonic System; Department of Electrophysics; Department of Photonics
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