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公開日期標題作者
10-五月-2004Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrateWu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; Cho, BJ; Chin, A; Kwong, DL; Du, AY; Tung, CH; Balasubramanian, N; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2003Effect of Zr/Ti ratios on characterization of Pb(ZrxTi1-x)O-3 thin films on Al2O3 buffered Si for one-transistor memory applicationsSun, CL; Hsu, JJ; Chen, SY; Chin, A; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十一月-2001Effects of excimer laser dopant activation on low temperature polysilicon thin-film transistors with lightly doped drainsTseng, CH; Lin, CW; Chang, TK; Cheng, HC; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
17-二月-2003Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layersSun, CL; Chen, SY; Yang, MY; Chin, A; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
17-二月-2002Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layersSun, CL; Chen, SY; Yang, MY; Chin, A; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
4-十月-2004Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gateYu, XF; Zhu, CX; Li, MF; Chin, A; Du, AY; Wang, WD; Kwong, DL; 電子物理學系; Department of Electrophysics
1-七月-2000Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 angstromWu, YH; Yang, MY; Chin, A; Chen, WJ; Kwei, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1999Electrical characterization of Al2O3 on Si from thermally oxidized AlAs and AlLiao, CC; Chin, A; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2006Electrical-stress effects and device modeling of 0.18-mu m RF MOSFETsKao, HL; Chin, A; Liao, CC; Chen, CC; McAlister, SP; Chi, CC; 奈米科技中心; Center for Nanoscience and Technology
20-九月-2004Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistorsLow, T; Li, MF; Shen, C; Yeo, YC; Hou, YT; Zhu, CX; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1996Enhancement of the optical and electrical properties in InGaAlP/InGaP PIN heterostructures by rapid thermal annealing on misoriented substrateChin, A; Lin, HY; Lin, BC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1996Enhancement of the optical and electrical properties in InGaAlP/InGaP PIN heterostructures by rapid thermal annealing on misoriented substrateChin, A; Lin, HY; Lin, BC; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-九月-2000Fabrication of very high resistivity Si with low loss and cross talkWu, YH; Chin, A; Shih, KH; Wu, CC; Liao, CP; Pai, SC; Chi, CC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2005Formation of dual-phase HfO2-HfxSi1-xO2 dielectric and its application in memory devicesWang, YQ; Chen, JH; Yoo, WJ; Yeo, YC; Yeo, YC; Chin, A; Du, AY; 奈米科技中心; Center for Nanoscience and Technology
1-八月-2002Formation of Ni germano-silicide on single crystalline Si0.3Ge0.7/SiLin, CY; Chen, WJ; Lai, CH; Chin, A; Liu, J; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2002Frequency-dependent capacitance reduction in high-k AlTiOx and Al2O3 gate dielectrics from IF to RF frequency rangeChen, SB; Lai, CH; Chan, KT; Chin, A; Hsieh, JC; Liu, J; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
20-七月-2005A fully planar microstrip coupled-line coupler with a high coupling levelChen, CC; Kuo, JT; Jiang, M; Chin, A; 傳播研究所; 電子工程學系及電子研究所; Institute of Communication Studies; Department of Electronics Engineering and Institute of Electronics
1-十二月-2003Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETsYu, DS; Wu, CH; Huang, CH; Chin, A; Chen, WJ; Zhu, CX; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETsHuang, CH; Yu, DS; Chin, A; Wu, CH; Chen, WJ; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2003Fully silicided NiSi gate on La2O3 MOSFETsLin, CY; Ma, MW; Chin, A; Yeo, YC; Zhu, CX; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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