Effects of excimer laser dopant activation on low temperature polysilicon thin-film transistors with lightly doped drains

Abstract

Excimer laser annealing has been utilized to manufacture low temperature polycrystalline silicon thin-film transistors with lightly doped drain (LDD) structures. The excimer laser annealing can effectively reduce the thermal budget of source/drain dopant activation, namely, without substrate heating. With the advantages of LDD structure, high performance device characteristics with a low "off" state current of 4.38 x 10(-12) A/mum, high on/off current ratio of 1.6 x 10(7). and good field-effect mobility of 268 cm(2)/V s. can be achieved simultaneously. (C) 2001 The Electrochemical Society.