國立陽明交通大學機構典藏：瀏覽交通大學機構典藏

瀏覽的方式：作者 Sze, Simon M.

顯示 21 到 40 筆資料，總共 174 筆 < 上一頁下一頁 >

公開日期	標題	作者
1-十二月-2008	Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction	Lin, Chao-Cheng; Chang, Ting-; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009	Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment	Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-三月-2009	Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memory	Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Shueh, Pei-Kun; Lin, Chao-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Min-Chen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
7-六月-2019	Communication-Potential of the pi-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications	Yao, Jing-Neng; Lin, Yueh-Chin; Wong, Ying-Chieh; Huang, Ting-Jui; Hsu, Heng-Tung; Sze, Simon M.; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
26-十月-2017	Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment	Yuan, Fang-Yuan; Deng, Ning; Shih, Chih-Cheng; Tseng, Yi-Ting; Chang, Ting-Chang; Chang, Kuan-Chang; Wang, Ming-Hui; Chen, Wen-Chung; Zheng, Hao-Xuan; Wu, Huaqiang; Qian, He; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
26-九月-2016	Confirmation of filament dissolution behavior by analyzing electrical field effect during reset process in oxide-based RRAM	Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Lin, Wen-Yan; Chen, Min-Chen; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2019	Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold	Tsai, Yi-Chia; Magyari-Kope, Blanka; Li, Yiming; Samukawa, Seiji; Nishi, Yoshio; Sze, Simon M.; 交大名義發表; 電子工程學系及電子研究所; 電機工程學系; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
10-九月-2012	Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment	Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Liao, Kuo-Hsiao; Tseng, Bae-Heng; Sze, Simon M.; 電子工程學系及電子研究所; 腦科學研究中心; Department of Electronics Engineering and Institute of Electronics; Brain Research Center
1-十月-2018	The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based Selector	Chen, Chun-Kuei; Lin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Shih, Chih-Cheng; Tseng, Yi-Ting; Zheng, Hao-Xuan; Chen, Ying-Chen; Chang, Yao-Feng; Lin, Chun-Chu; Huang, Hui-Chun; Huang, Wei-Chen; Wang, Hao; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
14-四月-2014	Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors	Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2014	Effect of Annealing on Defect Elimination for High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistor	Fuh, Chur-Shyang; Liu, Po-Tsun; Huang, Wei-Hsun; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
1-一月-1970	Effect of Annealing Treatment on Performance of Ga2O3 Conductive-Bridging Random-Access Memory	Gan, Kai-Jhih; Liu, Po-Tsun; Ruan, Dun-Bao; Hsu, Chih-Chieh; Chiu, Yu-Chuan; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; 光電工程研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of EO Enginerring
1-五月-2017	Effect of charge quantity on conduction mechanism of high-and low-resistance states during forming process in a one-transistor-one-resistor resistance random access memory	Wu, Cheng-Hsien; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Pan, Chih-Hung; Su, Yu-Ting; Chen, Po-Hsun; Lin, Shih-Kai; Hu, Shih-Jie; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
三月-2016	Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devices	Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liao, Kuo-Hsiao; Syu, Yong-En; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2013	Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory Devices	Chen, Min-Chen; Chang, Ting-Chang; Chiu, Yi-Chieh; Chen, Shih-Cheng; Huang, Sheng-Yao; Syu, Yong-En; Chang, Kuan-Chang; Huang, Hui-Chun; Tsai, Tsung-Ming; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
20-五月-2013	The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory	Huang, Jen-Wei; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Chen, Hsin-Lu; Pan, Yin-Chih; Huang, Xuan; Zhang, Fengyan; Syu, Yong-En; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2019	The Effect of Humidity on Reducing Forming Voltage in Conductive-Bridge Random Access Memory With an Alloy Electrode	Lin, Shih-Kai; Chen, Min-Chen; Chang, Ting-Chang; Lien, Chen-Hsin; Chang, Jing-Shuen; Wu, Cheng-Hsien; Tseng, Yi-Ting; Xu, You-Lin; Huang, Kai-Lin; Sun, Li-Chuan; Zhang, Yong-Ci; Chiu, Yu-Ju; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-八月-2018	Effect of interfacial layer on device performance of metal oxide thin-film transistor with a multilayer high-k gate stack	Ruan, Dun-Bao; Liu, Po-Tsun; Chiu, Yu-Chuan; Kuo, Po-Yi; Yu, Min-Chin; Kan, Kai-Zhi; Chien, Ta-Chun; Chen, Yi-Heng; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; 光電工程研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of EO Enginerring
2012	The Effect of Silicon Oxide Based RRAM with Tin Doping	Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012	The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)	Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Liao, Kuo-Hsiao; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics

顯示 21 到 40 筆資料，總共 174 筆 < 上一頁下一頁 >

瀏覽 的方式： 作者 Sze, Simon M.

瀏覽的方式：作者 Sze, Simon M.