標題: | Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory Devices |
作者: | Chen, Min-Chen Chang, Ting-Chang Chiu, Yi-Chieh Chen, Shih-Cheng Huang, Sheng-Yao Syu, Yong-En Chang, Kuan-Chang Huang, Hui-Chun Tsai, Tsung-Ming Gan, Der-Shin Sze, Simon M. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-一月-2013 |
摘要: | The devices composed of Pt/TaON/TiN reveal bipolar switching behavior that shows excellent resistance ratio of 10(2) with operations over 100 DC cycles. The formation/disruption of conducting filaments by oxygen anions migration near/at the TiN electrode was applied to explain the switching behavior. In comparison with Pt/TaON/TiN device, the Cu/TaON/TiN device exhibits reversed bipolar resistive switching characteristic. The switching mechanism of Cu/TaON/TiN device is regarded as the Cu redox reaction and migration in the TaON film. Furthermore, the setting voltage of the Cu/TaON/TiN device is lower than that of the Pt/TaON/TiN device due to the confined conduction path by Cu filaments. |
URI: | http://dx.doi.org/10.1149/05329.0001ecst http://hdl.handle.net/11536/125177 |
ISBN: | 978-1-60768-481-7; 978-1-62332-126-0 |
ISSN: | 1938-5862 |
DOI: | 10.1149/05329.0001ecst |
期刊: | STUDENT POSTERS (GENERAL) - 223RD ECS MEETING |
Volume: | 53 |
Issue: | 29 |
顯示於類別: | 會議論文 |