Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory Devices

Abstract

The devices composed of Pt/TaON/TiN reveal bipolar switching behavior that shows excellent resistance ratio of 10(2) with operations over 100 DC cycles. The formation/disruption of conducting filaments by oxygen anions migration near/at the TiN electrode was applied to explain the switching behavior. In comparison with Pt/TaON/TiN device, the Cu/TaON/TiN device exhibits reversed bipolar resistive switching characteristic. The switching mechanism of Cu/TaON/TiN device is regarded as the Cu redox reaction and migration in the TaON film. Furthermore, the setting voltage of the Cu/TaON/TiN device is lower than that of the Pt/TaON/TiN device due to the confined conduction path by Cu filaments.