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公開日期標題作者
1-十月-2001Impact of silicide formation on the resistance of common source/drain regionTsui, BY; Wu, MD; Gan, TC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2003Investigation of Cu/TaN metal gate for metal-oxide-silicon devicesTsui, BY; Huang, CF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2003Investigation of Cu/TaN metal gate for metal-oxide-silicon devices (vol 150, pg G22, 2003)Tsui, BY; Huang, CF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006Investigation of molybdenum nitride gate on SiO2 and HfO2 for MOSFET applicationTsui, BY; Huang, CF; Lu, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2003Metal drift induced electrical instability of porous low dielectric constant filmFang, KL; Tsui, BY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2004A novel 25-nm modified Schottky-barrier FinFET with high performanceTsui, BY; Lin, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004A novel fully self-aligned process for high cell density trench gate power MOSFETsTsui, BY; Gan, TC; Wu, MD; Chou, HH; Wu, ZL; Sune, CT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2005A novel wafer reclaim method for amorphous SiC and carbon doped oxide filmsTsui, BY; Fang, KL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003A novel wafer reclaim method for silicon carbide filmTsui, BY; Fang, KL; Wu, CH; Li, YH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Optimization of back side cleaning process to eliminate copper contaminationChou, WY; Tsui, BY; Kuo, CW; Kang, TK; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2000Plasma charging damage during contact hole etch in high-density plasma etcherTsui, BY; Lin, SS; Tsai, CS; Hsia, CC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2005Process and characteristics of modified Schottky barrier (MSB) p-channel FinFETsTsui, BY; Lin, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2003Process sensitivity and robustness analysis of via-first dual-damascene processTsui, BY; Chen, CW; Huang, SM; Lin, SS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2006Short-channel metal-gate TFTs with modified Schottky-barrier source/drainHuang, CF; Tsui, BY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2004Simulation study of carbon nanotube field emission display with under-gate and planar-gate structuresLan, YC; Lee, CT; Hu, Y; Chen, SH; Lee, CC; Tsui, BY; Lin, TL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2003Stability investigation of single-wafer process by using a spin etcherKang, TK; Wang, CC; Tsui, BY; Yang, WL; Chien, FT; Yang, SY; Chang, CY; Li, YH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
26-六月-2006Study on the interface thermal stability of metal-oxide-semiconductor structures by inelastic electron tunneling spectroscopyHuang, CF; Tsui, BY; Tzeng, PJ; Lee, LS; Tsai, MJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2001Surface-processing-enhanced copper diffusion into fluorosilicate glassTsui, BY; Fang, KL; Lee, SD; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Trench gate power MOSFETs with retrograde body profileTsui, BY; Wu, MD; Gan, TC; Chou, HH; Wu, ZL; Sune, CT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2006Two-frequency C-V correction using five-element circuit model for high-k gate dielectric and ultrathin oxideWu, WH; Tsui, BY; Huang, YP; Hsieh, FC; Chen, MC; Hou, YT; Jin, Y; Tao, HJ; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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