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公開日期標題作者
1-四月-2012Robust Data Retention and Superior Endurance of Silicon-Oxide-Nitride-Oxide-Silicon-Type Nonvolatile Memory with NH3-Plasma-Treated and Pd-Nanocrystal-Embedded Charge Storage LayerLiu, Sheng-Hsien; Yang, Wen-Luh; Hsiao, Yu-Ping; Chao, Tien-Sheng; 電子物理學系; Department of Electrophysics
1-七月-2010A Robust Data Retention Characteristic of Sol-Gel-Derived Nanocrystal Memory by Hot-Hole TrappingWu, Chi-Chang; Ko, Fu-Hsiang; Yang, Wen-Luh; You, Hsin-Chiang; Liu, Fu-Ken; Yeh, Chen-Chih; Liu, Pin-Lin; Tung, Chiou-Kou; Cheng, Ching-Hwa; 材料科學與工程學系; 材料科學與工程學系奈米科技碩博班; Department of Materials Science and Engineering; Graduate Program of Nanotechnology , Department of Materials Science and Engineering
1-七月-2008SONOS memories with embedded silicon nanocrystals in nitrideLiu, Mei-Chun; Chiang, Tsung-Yu; Kuo, Po-Yi; Chou, Ming-Hong; Wu, Yi-Hong; You, Hsin-Chiang; Cheng, Ching-Hwa; Liu, Sheng-Hsien; Yang, Wen-Luh; Lei, Tan-Fu; Chao, Tien-Sheng; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
2008SONOS memories with embedded silicon nanocrystals in nitride by In-situ deposition methodWu, Yi-Hong; Chiang, Tsung-Yu; Liu, Sheng-Hsien; Yang, Wen-Luh; Chao, Tien-Sheng; Chin, Fun-Tat; 電子物理學系; Department of Electrophysics
1-八月-2006SONOS-type flash memory using an HfO2 as a charge trapping layer deposited by the sol-gel spin-coating methodYou, Hsin-Chiang; Hsu, Tze-Hsiang; Ko, Fu-Hsiang; Huang, Jiang-Wen; Yang, Wen-Luh; Lei, Tan-Fu; 材料科學與工程學系奈米科技碩博班; 電子工程學系及電子研究所; Graduate Program of Nanotechnology , Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
5-五月-2008Stress-induced morphology and fine-line stability enhancement of NiSi on poly-SiGe with a buffer polycrystalline silicon interlayerWu, Chi-Chang; Wu, Wen-Fa; Ko, Fu-Hsiang; You, Hsin-Chiang; Yang, Wen-Luh; 材料科學與工程學系; 材料科學與工程學系奈米科技碩博班; Department of Materials Science and Engineering; Graduate Program of Nanotechnology , Department of Materials Science and Engineering
1-一月-2015Switching characteristics in Cu:SiO2 by chemical soak methods for resistive random access memory (ReRAM)Chin, Fun-Tat; Lin, Yu-Hsien; Yang, Wen-Luh; Liao, Chin-Hsuan; Lin, Li-Min; Hsiao, Yu-Ping; Chao, Tien-Sheng; 電子物理學系; Department of Electrophysics
1-三月-2018Ultra-fast and sensitive silicon nanobelt field-effect transistor for high-throughput screening of alpha-fetoproteinManga, Yankuba B.; Ko, Fu-Hsiang; Yang, Yuh-Shyong; Hung, Jia-Yang; Yang, Wen-Luh; Huang, Haw-Ming; Wu, Chi-Chang; 材料科學與工程學系; 生物科技學系; Department of Materials Science and Engineering; Department of Biological Science and Technology