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公開日期標題作者
1-六月-1991THE DELTA-DOPED IN0.25GA0.75AS/GAAS PSEUDOMORPHIC HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES PREPARED BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITIONCHANG, CY; LIN, W; HSU, WC; WU, TS; CHANG, SZ; WANG, C; 電控工程研究所; Institute of Electrical and Control Engineering
7-二月-1994DEPOSITION OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON FILMS AT REDUCED PRESSURESLIN, HC; LIN, HY; CHANG, CY; LEI, TF; WANG, PJ; DENG, RC; LIN, JD; 電控工程研究所; Institute of Electrical and Control Engineering
1-十一月-1991DIRECT EVIDENCE OF GATE OXIDE THICKNESS INCREASE IN TUNGSTEN POLYCIDE PROCESSESHSU, SL; LIU, LM; LIN, MS; CHANG, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1988THE DOPED QUANTUM WELL GATE FET FABRICATED BY LOW-PRESSURE MOCVDLIN, W; LEI, MD; CHANG, CY; HSU, WC; DI, LB; KAI, F; 電控工程研究所; Institute of Electrical and Control Engineering
20-六月-1993DOPING OF INGAP EPITAXIAL LAYERS GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITIONWU, CC; LIN, KC; CHAN, SH; FENG, MS; CHANG, CY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-八月-1994EFFECT OF BORON DOPING ON THE STRUCTURAL-PROPERTIES OF POLYCRYSTALLINE SILICON FILMS GROWN AT REDUCED PRESSURESLIN, HC; LIN, HY; CHANG, CY; JUNG, TG; WANG, PJ; DENG, RC; LIN, JD; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1994EFFECT OF GE CONCENTRATION ON STATIC AND MICROWAVE PERFORMANCES IN GEXSI1-X HETEROJUNCTION BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTIONCHYAN, YF; SZE, SM; CHANG, CY; REIF, R; 電控工程研究所; Institute of Electrical and Control Engineering
1-五月-1994EFFECT OF INTERFACIAL OXIDE ON STATIC AND HIGH-FREQUENCY PERFORMANCE IN POLYEMITTER BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTIONCHYAN, YF; SZE, SM; CHANG, CY; REIF, R; 電控工程研究所; Institute of Electrical and Control Engineering
1-七月-1995EFFECT OF OXYGEN IMPURITY ON MICROSTRUCTURE AND BORON PENETRATION IN A BF2+ IMPLANTED LPCVD STACKED AMORPHOUS-SILICON P(+) GATED PMOS CAPACITORLIN, CY; PAN, FM; CHOU, PF; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-十月-1995EFFECTS OF DRY-ETCHING DAMAGE REMOVAL ON LOW-TEMPERATURE SILICON SELECTIVE EPITAXIAL-GROWTHTSENG, HC; CHANG, CY; PAN, FM; CHEN, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1995EFFECTS OF DRY-ETCHING DAMAGE REMOVAL ON LOW-TEMPERATURE SILICON SELECTIVE EPITAXIAL-GROWTHTSENG, HC; CHANG, CY; PAN, FM; CHEN, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-七月-1994EFFECTS OF N2O-PLASMA TREATMENT OF A-SIOXNY/A-SINX GATE INSULATORS ON ELECTRICAL STABILITY OF A-SIH THIN-FILM TRANSISTORSJEN, TS; LEU, ST; CHOU, TC; HONG, JW; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-五月-1992EFFECTS OF POLYSILICON GATE ON CHARACTERISTICS OF ONO CAPACITORSFENG, MS; LIANG, KC; CHANG, CY; LIN, LY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-九月-1994EFFECTS OF SIH4, GEH4, AND B2H6 ON THE NUCLEATION AND DEPOSITION OF POLYCRYSTALLINE SI1-XGEX FILMSLIN, HC; CHANG, CY; CHEN, WH; TSAI, WC; CHANG, TC; JUNG, TG; LIN, HY; 電控工程研究所; Institute of Electrical and Control Engineering
1-二月-1994AN EFFICIENT APPROACH TO REAL-TIME TRAFFIC ROUTEING FOR TELEPHONE NETWORK MANAGEMENTCHANG, CY; CHUNG, CG; 交大名義發表; National Chiao Tung University
1-八月-1990ELECTRICAL AND OPTICAL CHARACTERISTICS OF AN A-SI-H/C-SI HETEROJUNCTION SWITCHCHEN, YW; FANG, YK; LEE, HD; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-四月-1991ELECTRICAL CHARACTERISTICS OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES WITH DIFFERENT ELECTRODE DOPING CONCENTRATIONSWU, JS; CHANG, CY; LEE, CP; CHANG, KH; LIU, DG; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1994ELECTROLUMINESCENCE CHARACTERISTICS AND CURRENT-CONDUCTION MECHANISM OF A SI-C-H-P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYER INSERTED AT P-I INTERFACEJEN, TS; PAN, JW; SHIN, NF; HONG, JW; CHANG, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1994ELECTROLUMINESCENCE CHARACTERISTICS AND CURRENT-CONDUCTION MECHANISM OF A SI-C-H-P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYER INSERTED AT P-I INTERFACEJEN, TS; PAN, JW; SHIN, NF; HONG, JW; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-九月-1994ELECTROLUMINESCENCE OF A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH QUANTUM-WELL-INJECTION STRUCTURESJEN, TS; SHIN, NF; TSAY, WC; CHEN, JY; NING, SL; HONG, JW; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
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