DIRECT EVIDENCE OF GATE OXIDE THICKNESS INCREASE IN TUNGSTEN POLYCIDE PROCESSES

標題:	DIRECT EVIDENCE OF GATE OXIDE THICKNESS INCREASE IN TUNGSTEN POLYCIDE PROCESSES
作者:	HSU, SL LIU, LM LIN, MS CHANG, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1-十一月-1991
摘要:	The increase of the "effective" gate oxide thickness for W-polycide processes is studied. The samples with as-deposited and annealed W polycide are analyzed by secondary ion mass spectrometry, transmission electron microscopy (TEM), and high-frequency CV measurements. The TEM cross section shows that the gate oxide thicknesses are approximately 244 and approximately 285 angstrom for as-deposited and 1000-degrees-C annealed samples, respectively. The TEM results agree with that from CV measurements. The TEM analyses provide a direct physical evidence of an additional oxide thickness (approximately 41 angstrom) during the W-polycide annealing.
URI:	http://dx.doi.org/10.1109/55.119218 http://hdl.handle.net/11536/3648
ISSN:	0741-3106
DOI:	10.1109/55.119218
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	12
Issue:	11
起始頁:	623
結束頁:	625
顯示於類別：	期刊論文

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