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公開日期標題作者
1-六月-2000Improved ultrathin gate oxide integrity in p(+)-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantationChen, CC; Lin, HC; Chang, CY; Huang, TY; Chien, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1998Improving radiation hardness of EEPROM/flash cell by N2O annealingHuang, TY; Jong, FC; Chao, TS; Lin, HC; Leu, LY; Young, K; Lin, CH; Chiu, KY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2005Influence of local information on social simulations in small-world network modelsHuang, CY; Sun, CT; Lin, HC; 資訊工程學系; Department of Computer Science
2004Influence of local information on social simulations under the small-world modelLin, HC; Huang, CY; Sun, CT; 資訊工程學系; Department of Computer Science
1-二月-1999Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxyPan, YC; Lee, WH; Shu, CK; Lin, HC; Chiang, CI; Chang, H; Lin, DS; Lee, MC; Chen, WK; 電子物理學系; 物理研究所; Department of Electrophysics; Institute of Physics
1-九月-1997Interfacial abruptness in Si/SiGe heteroepitaxy grown by ultrahigh vacuum chemical vapor depositionTsai, WC; Chang, CY; Jung, TG; Chang, TC; Lin, HC; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1997Interfacial abruptness in Si/SiGe heteroepitaxy grown by ultrahigh vacuum chemical vapor depositionTsai, WC; Chang, CY; Jung, TG; Chang, TC; Lin, HC; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2006Investigation of DC hot-carrier degradation at elevated temperatures for n-channel metal-oxide-semiconductor field-effect-transistor of 0.13 mu m technologyLin, JC; Chen, SY; Chen, HW; Jhou, ZW; Lin, HC; Chou, S; Ko, J; Lei, TF; Haung, HS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
3-八月-1999Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor depositionShu, CK; Ou, J; Lin, HC; Chen, WK; Lee, MC; 電子物理學系; Department of Electrophysics
3-八月-1998Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor depositionShu, CK; Ou, J; Lin, HC; Chen, WK; Lee, MC; 電子物理學系; Department of Electrophysics
2005Localized lateral growth of single-walled carbon nanotubes for field-effect transistors by a cobalt-mix-TEOS methodChen, BH; Lo, PY; Wei, JH; Tsai, MJ; Hwang, CL; Chao, TS; Lin, HC; Huang, TY; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-四月-2006Mismatches after hot-carrier injection in advanced complementary metal-oxide-semiconductor technology particularly for analog applicationsChen, SY; Lin, JC; Chen, HW; Lin, HC; Jhou, ZW; Chou, S; Ko, J; Lei, TF; Haung, HS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997A model for photoresist-induced charging damage in ultra-thin gate oxidesLin, HC; Chien, CH; Wang, MF; Huang, TY; Chang, CY; 交大名義發表; 奈米中心; National Chiao Tung University; Nano Facility Center
2001New experimental evidences of the plasma charging enhanced hot carrier effect and its impact on surface channel CMOS devicesChen, SJ; Lin, CC; Chung, SS; Lin, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
19-十月-2004Novel alternating fluorene-based conjugated polymers containing oxadiazole pendants with various terminal groupsSung, HH; Lin, HC; 材料科學與工程學系; Department of Materials Science and Engineering
2004A novel methodology for extracting effective density-of-states in poly-Si thin-film transistorsLin, HC; Yeh, KL; Lee, MH; Su, YC; Huang, TY; Shen, SW; Lin, HY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2001A novel thin-film transistor with self-aligned field induced drainLin, HC; Yu, CM; Lin, CY; Yeh, KL; Huang, TY; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000Optical and electrical investigations of isoelectronic In-doped GaN filmsShu, CK; Lee, WH; Pan, YC; Chen, CC; Lin, HC; Ou, J; Chen, WH; Chen, WK; Lee, MC; 電子物理學系; Department of Electrophysics
1-三月-1999Oxide thickness dependence of plasma charging damageLin, HC; Chen, CC; Wang, MF; Hsien, SK; Chien, CH; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-1998Phonon-plasmon interaction in GaN films studied by Raman scatteringShen, CC; Shu, CK; Lin, HC; Chen, WK; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
顯示 61 到 80 筆資料，總共 132 筆 < 上一頁   下一頁 >