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公開日期標題作者
1-九月-1993HYDROGENATED AMORPHOUS-SILICON CARBIDE DOUBLE GRADED-GAP P-I-N THIN-FILM LIGHT-EMITTING-DIODESSHIN, NF; CHEN, JY; JEN, TS; HONG, JW; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-一月-1994HYDROGENATED AMORPHOUS-SILICON CARBIDE P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYERS INSERTED AT P-I INTERFACEJEN, TS; PAN, JW; SHIN, NF; TSAY, WC; HONG, JW; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-二月-1990THE HYDROGENATED AMORPHOUS-SILICON REACH-THROUGH AVALANCHE PHOTODIODES (A-SI-H RAPDS)HONG, JW; CHEN, YW; LAIH, WL; FANG, YK; CHANG, CY; GONG, C; 電控工程研究所; Institute of Electrical and Control Engineering
15-一月-1991IMPROVED ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES USING 2-DIMENSIONAL SOURCE ELECTRONSWU, JS; LEE, CP; CHANG, CY; CHANG, KH; LIU, DG; LIOU, DC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1-六月-1988AN IMPROVED MO/N-GAAS CONTACT BY INTERPOSITION OF A THIN PD LAYERNEE, CY; CHANG, CY; CHENG, TF; HUANG, TS; 電控工程研究所; Institute of Electrical and Control Engineering
1-九月-1994INFLUENCE OF METALORGANIC SOURCES ON THE COMPOSITION UNIFORMITY OF SELECTIVELY GROWN GAXIN1-XPCHAN, SH; CHANG, CY; SZE, SM; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-九月-1991INSITU GROWTH OF SUPERCONDUCTING YBA2CU3O7-X THIN-FILMSHAUNG, CJ; CHANG, CY; CHEN, MC; TSENG, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1994INTERFACE-TRAP EFFECT ON GATE INDUCED DRAIN LEAKAGE CURRENT IN SUBMICRON N-MOSFETSWANG, TH; HUANG, CM; CHANG, TE; CHOU, JW; CHANG, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1992INTRINSIC AND EXTRINSIC EFFECTS ON PERFORMANCE LIMITATION OF ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURESWU, JS; LEE, CP; CHANG, CY; CHANG, KH; LIU, DG; LIOU, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1990INVESTIGATION OF 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICES PREPARED BY MOLECULAR-BEAM EPITAXYWANG, YH; YARN, KF; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
28-二月-1991INVESTIGATION OF INDIUM DOPING AND INCORPORATION IN ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURESWU, JS; CHANG, KH; LEE, CP; CHANG, CY; LIU, DG; LIOU, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1980AN INVESTIGATION OF MINORITY-CARRIER LIFETIME IN SILICON DOPED EITHER WITH ZINC OR COBALTCHANG, CY; SU, YK; CHI, CC; 交大名義發表; National Chiao Tung University
1-六月-1994INVESTIGATION OF NEW NARROW-BANDWIDTH A-SI-H PHOTODETECTORSHIN, NF; HONG, JW; WU, YF; JEN, TS; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-六月-1995INVESTIGATION ON THE DISTRIBUTION OF FLUORINE AND BORON IN POLYCRYSTALLINE SILICON SILICON SYSTEMSCHEN, TP; LEI, TF; CHANG, CY; HSIEH, WY; CHEN, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1994INVESTIGATIONS ON THE COMPOSITIONAL NONUNIFORMITY OF SELECTIVELY GROWN GAXIN1-XP BY LP-MOCVD USING EDMI, TMI, TEG, AND TMG AS GROUP-III SOURCESCHAN, SH; CHANG, CY; SZE, SM; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-一月-1994A KNOWLEDGE-BASED OPERATION SUPPORT SYSTEM FOR NETWORK TRAFFIC MANAGEMENTCHANG, CY; CHUNG, CG; 交大名義發表; National Chiao Tung University
5-六月-1995THE LONG-TERM RELAXATION AND BUILDUP TRANSIENT OF PHOTOCONDUCTIVITY IN SI1-XGEX/SI QUANTUM-WELLSCHU, LH; CHEN, YF; CHANG, DC; CHANG, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1994LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON AND SILICON-GERMANIUM ALLOY BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONJUNG, TG; CHANG, CY; CHANG, TC; LIN, HC; WANG, T; TSAI, WC; HUANG, GW; WANG, PJ; 電控工程研究所; Institute of Electrical and Control Engineering
1-十二月-1995LOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER AS SOLID DIFFUSION SOURCE FOR POLYSILICON CONTACTED P(+)-N SHALLOW JUNCTIONLEI, TF; CHEN, TP; LIN, HC; CHANG, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
4-四月-1994LOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONCHEN, TP; LEI, TF; LIN, HC; CHANG, CY; HSIEH, WY; CHEN, LJ; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
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