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公開日期標題作者
1-二月-2013Characteristic of p-Type Junctionless Gate-All-Around Nanowire Transistor and Sensitivity AnalysisHan, Ming-Hung; Chang, Chun-Yen; Jhan, Yi-Ruei; Wu, Jia-Jiun; Chen, Hung-Bin; Cheng, Ya-Chi; Wu, Yung-Chun; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2013Characteristics of Gate-All-Around Junctionless Poly-Si TFTs With an Ultrathin ChannelChen, Hung-Bin; Chang, Chun-Yen; Lu, Nan-Heng; Wu, Jia-Jiun; Han, Ming-Hung; Cheng, Ya-Chi; Wu, Yung-Chun; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2013Device and Circuit Performance Estimation of Junctionless Bulk FinFETsHan, Ming-Hung; Chang, Chun-Yen; Chen, Hung-Bin; Cheng, Ya-Chi; Wu, Yung-Chun; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010Discrete-Dopant-Induced Power-Delay Characteristic Fluctuation in 16 nm Complementary Metal-Oxide-Semiconductor with High Dielectric Constant MaterialHan, Ming-Hung; Li, Yiming; Hwang, Chih-Hong; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
2009Effect of Process Variation on 15-nm-Gate Stacked Multichannel Surrounding-Gate Field Effect TransistorHan, Ming-Hung; Cheng, Hui-Wen; Hwang, Chih-Hong; Li, Yiming; 傳播研究所; Institute of Communication Studies
1-九月-2014Effect of the Circle-Grid Electrodes on Concentrated GaAs Solar Cell EfficiencyChung, Chen-Chen; Binh Tinh Tran; Han, Ming-Hung; Lin, Kung-Liang; Yu, Hung-Wei; Ho, Yen-Teng; Chang, Chun-Yen; Chang, Edward Yi; 交大名義發表; 材料科學與工程學系; 電子工程學系及電子研究所; National Chiao Tung University; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
16-九月-2013High voltage characteristics of junctionless poly-silicon thin film transistorsCheng, Ya-Chi; Wu, Yung-Chun; Chen, Hung-Bin; Han, Ming-Hung; Lu, Nan-Heng; Su, Jun-Ji; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2010The impact of high-frequency characteristics induced by intrinsic parameter fluctuations in nano-MOSFET device and circuitHan, Ming-Hung; Li, Yiming; Hwang, Chih-Hong; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
1-五月-2013Improving Breakdown Voltage of LDMOS Using a Novel Cost Effective DesignHan, Ming-Hung; Chen, Hung-Bin; Chang, Chia-Jung; Tsai, Chi-Chong; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2019Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) MethodChen, Lun-Chun; Chen, Hung-Bin; Chang, Yu-Shuo; Lin, Shih-Han; Han, Ming-Hung; Wu, Jia-Jiun; Yeh, Mu-Shin; Lin, Yu-Ru; Wu, Yung-Chun; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2012A Novel Cost Effective Double Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor Design for Improving Off-State Breakdown VoltageHan, Ming-Hung; Chen, Hung-Bin; Chang, Chia-Jung; Wu, Jia-Jiun; Chen, Wen-Chong; Tsai, Chi-Chong; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2013Performance Comparison Between Bulk and SOI Junctionless TransistorsHan, Ming-Hung; Chang, Chun-Yen; Chen, Hung-Bin; Wu, Jia-Jiun; Cheng, Ya-Chi; Wu, Yung-Chun; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2010Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS TechnologiesLi, Yiming; Hwang, Chih-Hong; Li, Tien-Yeh; Han, Ming-Hung; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
1-一月-2011Quantum hydrodynamic simulation of discrete-dopant fluctuated physical quantities in nanoscale FinFETLi, Yiming; Cheng, Hui-Wen; Han, Ming-Hung; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
5-三月-2010Simulation of characteristic variation in 16 nm gate FinFET devices due to intrinsic parameter fluctuationsLi, Yiming; Hwang, Chih-Hong; Han, Ming-Hung; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
2009Statistical Analysis of Metal Gate Workfunction Variability, Process Variation, and Random Dopant Fluctuation in Nano-CMOS CircuitsHwang, Chih-Hong; Li, Tien-Yeh; Han, Ming-Hung; Lee, Kuo-Fu; Cheng, Hui-Wen; Li, Yiming; 傳播研究所; Institute of Communication Studies
2010Statistical Simulation of Metal-Gate Work-function Fluctuation in High-kappa/Metal-Gate DevicesYu, Chia-Hui; Han, Ming-Hung; Cheng, Hui-Wen; Su, Zhong-Cheng; Li, Yiming; Watanabe, Hiroshi; 電機工程學系; Department of Electrical and Computer Engineering
1-十一月-2010Statistical Simulation of Static Noise Margin Variability in Static Random Access MemoryLi, Yiming; Cheng, Hui-Wen; Han, Ming-Hung; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
1-五月-2010Statistical variability in FinFET devices with intrinsic parameter fluctuationsHwang, Chih-Hong; Li, Yiming; Han, Ming-Hung; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
13-八月-2014Temperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistorCheng, Ya-Chi; Chen, Hung-Bin; Han, Ming-Hung; Lu, Nan-Heng; Su, Jun-Ji; Shao, Chi-Shen; Wu, Yung-Chun; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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