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公開日期標題作者
1-七月-1987THE DIELECTRIC RELIABILITY OF INTRINSIC THIN SIO2-FILMS THERMALLY GROWN ON A HEAVILY DOPED SI SUBSTRATE - CHARACTERIZATION AND MODELINGCHEN, CF; WU, CY; LEE, MK; CHEN, CN; 工學院; College of Engineering
1984THE EFFECT OF FILM THICKNESS ON THE ELECTRICAL-PROPERTIES OF LPCVD POLYSILICON FILMSLU, NCC; LU, CY; LEE, MK; SHIH, CC; WANG, CS; REUTER, W; SHENG, TT; 電控工程研究所; Institute of Electrical and Control Engineering
1-三月-1990THE EFFECT OF GATE ELECTRODES USING TUNGSTEN SILICIDES AND OR POLYSILICON ON THE DIELECTRIC CHARACTERISTICS OF VERY THIN OXIDESCHENG, HC; CHAO, CY; SU, WD; CHANG, SW; LEE, MK; WU, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1982GROWTH-KINETICS OF SILICON THERMAL NITRIDATIONWU, CY; KING, CW; LEE, MK; CHEN, CT; 電控工程研究所; Institute of Electrical and Control Engineering
1-一月-1983ON THE RESISTANCE SWITCHING IN POLYCRYSTALLINE-SILICON RESISTORSLU, CY; LU, NCC; SHIH, CC; LEE, MK; WANG, CS; 電控工程研究所; Institute of Electrical and Control Engineering
1-一月-1983ON THE RESISTANCE SWITCHING IN POLYCRYSTALLINE-SILICON RESISTORSLU, CY; LU, NCC; SHIH, CC; LEE, MK; WANG, CS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1984ON THE SEMI-INSULATING POLYCRYSTALLINE SILICON RESISTORLEE, MK; LU, CY; CHANG, KZ; SHIH, C; 電控工程研究所; Institute of Electrical and Control Engineering
1983OXIDATION RESISTANCE CHARACTERISTICS OF SILICON THERMAL NITRIDE FILMSWU, CY; KING, CW; LEE, MK; CHEN, CT; SHIH, CT; 電控工程研究所; Institute of Electrical and Control Engineering
1981SI OXIDATION IN O2-N2 IN THE PRESENCE OF HCLLEE, MK; LIU, SD; LEE, CL; 奈米中心; Nano Facility Center
1984STUDY OF ELECTRICAL CHARACTERISTICS ON THERMALLY NITRIDED SIO2 (NITROXIDE) FILMSCHEN, CT; TSENG, FC; CHANG, CY; LEE, MK; 電控工程研究所; Institute of Electrical and Control Engineering