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Issue DateTitleAuthor(s)
1-Jan-20061.3-mu m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBEYu, HC; Wang, JS; Su, YK; Chang, SJ; Lai, FI; Chang, YH; Kuo, HC; Sung, CP; Yang, HPD; Lin, KF; Wang, JM; Chi, JY; Hsiao, RS; Mikhrin, S; 光電工程學系; Department of Photonics
1-Sep-2000An anomalous crossover in Vth roll-off for indium-doped nMOSFETsChang, SJ; Chang, CY; Chen, CM; Chou, JW; Chao, TS; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2001An automatic macro program for radio frequency MOSFET characteristics analysisSu, CY; Chang, SJ; Chen, LP; Ho, YP; Huang, GW; Lin, DC; Tseng, BM; Lee, HY; Kuan, JF; Deng, YM; Wen, KA; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
18-Jul-2002BIST scheme for DAC testingChang, SJ; Lee, CL; Chen, JE; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1998Characterizations for blends of phosphorus-containing copolyester with poly(ethylene terephthalate)Chang, SJ; Chang, FC; 應用化學系; Department of Applied Chemistry
1-Dec-1999The combined effects of nitrogen implantation at S/D extension and N2O oxide on 0.18 mu m N- and P-metal oxide field effect transistors (MOSFETs)Chao, TS; Chang, SJ; Chien, CH; Lin, HC; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-1998Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygenChen, LP; Chan, YC; Chang, SJ; Huang, GW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-1998Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygenChen, LP; Chan, YC; Chang, SJ; Huang, GW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
20-Jul-2000Effect of coplanar probe pad design on noise figures of 0.35 mu m MOSFETsSu, CY; Chen, LP; Chang, SJ; Huang, GW; Ho, YP; Tseng, BM; Lin, DC; Lee, HY; Kuan, JF; Deng, YM; Chen, CL; Leu, LY; Wen, KA; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2001The effects of super-steep-retrograde indium channel profile on deep submicron n-channel metal-oxide-semiconductor field-effect transistorChen, CM; Chang, SJ; Chou, JW; Lin, T; Yeh, WK; Chang, CY; Luo, WZ; Lee, YJ; Chao, TS; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997Functional test pattern generation for CMOS operational amplifierChang, SJ; Lee, CL; Chen, JE; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-Mar-2000High performance 0.1 mu m dynamic threshold MOSFET using indium channel implantationChang, SJ; Chang, CY; Chao, TS; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2000High-performance and high-reliability 80-nm gate-length DTMOS with indium super steep retrograde channelChang, SJ; Chang, CY; Chen, CM; Chao, TS; Lee, YJ; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2002Impacts of gate structure on dynamic threshold SOI nMOSFETsLo, WC; Chang, SJ; Chang, CY; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2004Improvement of high-speed oxide-confined vertical-cavity surface-emitting lasersYu, HC; Chang, SJ; Su, YK; Sung, CP; Yang, HP; Huang, CY; Lin, YW; Wang, JM; La, FI; Kuo, HC; 光電工程學系; Department of Photonics
29-Apr-2003Liquid phase deposited SiO2 on GaNWu, HR; Lee, KW; Nian, TB; Chou, DW; Wu, JJH; Wang, YH; Houng, MP; Sze, PW; Su, YK; Chang, SJ; Ho, CH; Chiang, CI; Chern, YT; Juang, FS; Wen, TC; Lee, WI; Chyi, JI; 電子物理學系; Department of Electrophysics
1-May-2002A macro model of silicon spiral inductorSu, CY; Chen, LP; Chang, SJ; Tseng, BM; Lin, DC; Huang, GW; Ho, YP; Lee, HY; Kuan, JF; Wen, WY; Liou, P; Chen, CL; Leu, LY; Wen, KA; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-1996Numerical analysis of the transient behavior of the sidegating effect in GaAs MESFETsChang, SJ; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2000Reduced reverse narrow channel effect in thin SOI nMOSFETsChang, CY; Chang, SJ; Chao, TS; Wu, SD; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-1998Sequential distribution of copolyesters containing the phosphorus linking pendant groups characterized by H-1-NMRChang, SJ; Chang, FC; 應用化學系; Department of Applied Chemistry
Showing results 1 to 20 of 27  next >