Liquid phase deposited SiO2 on GaN

標題:	Liquid phase deposited SiO2 on GaN
作者:	Wu, HR Lee, KW Nian, TB Chou, DW Wu, JJH Wang, YH Houng, MP Sze, PW Su, YK Chang, SJ Ho, CH Chiang, CI Chern, YT Juang, FS Wen, TC Lee, WI Chyi, JI 電子物理學系 Department of Electrophysics
關鍵字:	liquid phase deposition;silicon dioxide
公開日期:	29-四月-2003
摘要:	An efficient and low cost approach to deposit uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) near room temperature are described and discussed. The process is simple. GaN wafers are immersed into a H2SiF6 and H3BO3 solution to form the silicon dioxide layers. The deposition conditions and the properties of the SiO2 films will be characterized. (C) 2002 Elsevier Science B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/S0254-0584(02)00504-7 http://hdl.handle.net/11536/27946
ISSN:	0254-0584
DOI:	10.1016/S0254-0584(02)00504-7
期刊:	MATERIALS CHEMISTRY AND PHYSICS
Volume:	80
Issue:	1
起始頁:	329
結束頁:	333
顯示於類別：	期刊論文

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