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Showing results 1 to 4 of 4
Issue DateTitleAuthor(s)
1-Sep-2010High-Reliability Dynamic-Threshold Source-Side Injection for 2-Bit/Cell With MLC Operation of Wrapped Select-Gate SONOS in NOR-Type Flash MemoryWang, Kuan-Ti; Chao, Tien-Sheng; Wu, Woei-Cherng; Yang, Wen-Luh; Lee, Chien-Hsing; Hsieh, Tsung-Min; Liou, Jhyy-Cheng; Wang, Shen-De; Chen, Tzu-Ping; Chen, Chien-Hung; Lin, Chih-Hung; Chen, Hwi-Huang; 電子物理學系; Department of Electrophysics
1-Jun-2009High-Speed Multilevel Wrapped-Select-Gate SONOS Memory Using a Novel Dynamic Threshold Source-Side-Injection (DTSSI) Programming MethodWang, Kuan-Ti; Chao, Tien-Sheng; Wu, Woei-Cherng; Chiang, Tsung-Yu; Wu, Yi-Hong; Yang, Wen-Luh; Lee, Chien-Hsing; Hsieh, Tsung-Min; Liou, Jhyy-Cheng; Wang, Shen-De; Chen, Tzu-Ping; Chen, Chien-Hung; Lin, Chih-Hung; Chen, Hwi-Huang; 電子物理學系; Department of Electrophysics
2007A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thicknessWu, Woei-Cherng; Chao, Tien-Sheng; Peng, Wu-Chin; Yang, Wen-Luh; Wang, Jer-Chyi; Chen, Jian-Hao; Ma, Ming-Wen; Lai, Chao-Sung; Yang, Tsung-Yu; Chen, Tzu-Ping; Chen, Chien-Hung; Lin, Chih-Hung; Chen, Hwi-Huang; Ko, Joe; 物理研究所; Institute of Physics
1-Nov-2009Physical Mechanism of High-Programming-Efficiency Dynamic-Threshold Source-Side Injection in Wrapped-Select-Gate SONOS for NOR-Type Flash MemoryWang, Kuan-Ti; Chao, Tien-Sheng; Chiang, Tsung-Yu; Wu, Woei-Cherng; Kuo, Po-Yi; Wu, Yi-Hong; Lu, Yu-Lun; Liao, Chia-Chun; Yang, Wen-Luh; Lee, Chien-Hsing; Hsieh, Tsung-Min; Liou, Jhyy-Cheng; Wang, Shen-De; Chen, Tzu-Ping; Chen, Chien-Hung; Lin, Chih-Hung; Chen, Hwi-Huang; 電子物理學系; Department of Electrophysics
Showing results 1 to 4 of 4