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Showing results 1 to 8 of 8
Issue DateTitleAuthor(s)
10-May-2004Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrateWu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; Cho, BJ; Chin, A; Kwong, DL; Du, AY; Tung, CH; Balasubramanian, N; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
4-Oct-2004Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gateYu, XF; Zhu, CX; Li, MF; Chin, A; Du, AY; Wang, WD; Kwong, DL; 電子物理學系; Department of Electrophysics
1-Jul-2005Formation of dual-phase HfO2-HfxSi1-xO2 dielectric and its application in memory devicesWang, YQ; Chen, JH; Yoo, WJ; Yeo, YC; Yeo, YC; Chin, A; Du, AY; 奈米科技中心; Center for Nanoscience and Technology
1-Feb-2005Germanium pMOSFETs with Schottky-barrier germanide S/D, high-kappa gate dielectric and metal gateZhu, SY; Li, R; Lee, SJ; Li, MF; Du, AY; Singh, J; Zhu, CX; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2004Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrodeZhu, SY; Yu, HY; Chen, JD; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2004N-type Schottky barrier source/drain MOSFET using ytterbium silicideZhu, SY; Chen, JD; Li, MF; Lee, SJ; Singh, J; Zhu, CX; Du, AY; Tung, CH; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2004Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrodeZhu, SY; Yu, HY; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2004A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivationWu, N; Zhang, QC; Zhu, CX; Chan, DSH; Du, AY; Balasubramanian, N; Li, MF; Chin, A; Sin, JKO; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 8 of 8